PART |
Description |
Maker |
HYB25D256400AT-7 HYB25D256800AT-7 HYB25D256400AT-8 |
256Mbit (32Mx8) DDR266A (2-3-3) 256Mbit (64Mx4) DDR 200 (2-2-2) End-of-Life 256Mbit (64Mx4) DDR266A (2-3-3) ?的256Mbit4Mx4)DDR266A-3-3)?
|
Infineon Technologies AG
|
HYB25D256800BTL-5A HYB25D256160BT-5A HYB25D256800B |
256MBit Double Data Rata SDRAM 256Mbit SDRAM的双倍数据拉
|
Infineon Technologies AG Infineon Technologies A...
|
M58LR128GU M58LR256GL |
128 and 256Mbit 1.8V supply Flash memories
|
STMicroelectronics
|
HYB25D256400BC-5 |
256Mbit Double Data Rate (DDR) Components
|
Infineon
|
V54C3256164VBUC V54C3256164VBUT V54C3256164VBLT7 |
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 LOW POWER 256Mbit SDRAM 3.3 VOLT, 54-BALL SOC BGA 54-PIN TSOPII 16M X 16 LOW POWER 256Mbit SDRAM 3.3 VOLT/ 54-BALL SOC BGA 54-PIN TSOPII 16M X 16
|
MOSEL-VITELIC Mosel Vitelic, Corp. Mosel Vitelic Corp
|
H55S2562JFR-60M H55S2562JFR-75M H55S2562JFR-A3M |
256MBit MOBILE SDR SDRAM based on 4M x 4Bank x16 I/O
|
Hynix Semiconductor
|
K4S560832B K4S560832B-TC_L1H K4S560832B-TC_L1L K4S |
256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
|
K4S561632D K4S561632D-TC_L75 K4S561632D-TC_L1H K4S |
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL
|
SAMSUNG[Samsung semiconductor] Samsung Electronic
|
V53C1256162VALS7 V53C1256162VALS7E V53C1256162VALS |
256Mbit MOBILE SDRAM 2.5 VOLT FBGA PACKAGE 16M X 16
|
N.A. ETC[ETC]
|
M366S3253BTS-C75 |
32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
HSD64M64F8KA HSD64M64F8KA-10 HSD64M64F8KA-10L HSD6 |
Synchronous DRAM Module 512Mbyte (64Mx64bit), SMM, based on 32Mx8 ,4Banks, 4K Ref., 3.3V
|
Hanbit Electronics Co.,Ltd
|
HDD32M64F8 HDD32M64F8-13A HDD32M64F8-13B HDD32M64F |
DDR SDRAM Module 256Mbyte (32Mx64bit), based on 32Mx8, 4Banks, 8K Ref., SMM,
|
HANBIT[Hanbit Electronics Co.,Ltd]
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