| PART |
Description |
Maker |
| NAND04G-B |
1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 1千兆千兆位，4千兆位，8千兆112 Byte/1056字的页面.8V/3V，NAND闪存
|
STMicroelectronics N.V.
|
| NAND02GR3B2BZA1 NAND02GR4B2BZA6 NAND02GR3B2BZB1 NA |
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 1千兆千兆位，2112 Byte/1056字的页面.8V/3V，NAND闪存
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 1千兆千兆位，2112 Byte/1056字的页面1.8V/3V，NAND闪存
|
意法半导
STMicroelectronics N.V.
|
| NAND01G-B |
1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
|
STMicroelectronics
|
| NAND08GW3B2CN1E NAND08GW3B2CN1F NAND08GW3B2CN6E NA |
4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories
|
Numonyx B.V
|
| NAND01G-A NAND128-A NAND256-A NAND01GR3A0AN1 NAND0 |
128 Mbit / 256 Mbit / 512 Mbit / 1 Gbit (x8/x16) 528 Byte/264 Word Page / 1.8V/3V / NAND Flash Memories
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
|
STMicroelectronics
ST Microelectronics
|
| NAND512-M NAND512W3M2 NAND512R4M3 NAND512R4M5 NAND |
256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP 同一封装内整合了256/512Mb/1Gb（x8/x16.8/3V28字节页）NAND闪存以及256/512Mb（x16/x32.8V的）LPSDRAM的MCP
|
意法半导
STMicroelectronics N.V.
|
| NN5116165ALRR-60 NN5116165ALTT-70 |
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
Bourns, Inc.
|
| HY512264JC-70 HY512264JC-60 HY512264SLJC-70 |
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
DB Lectro, Inc.
|
| LC321667BJ-80 |
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
Sanyo Electric Co., Ltd.
|
| HY514264BLJC-60 |
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
TE Connectivity, Ltd.
|
|
