| PART |
Description |
Maker |
| KSA1142OSTU |
PNP Epitaxial Silicon Transistor; Package: TO-126; No of Pins: 3; Container: Rail 0.1 A, 180 V, PNP, Si, POWER TRANSISTOR, TO-126
|
Fairchild Semiconductor, Corp.
|
| BD233STU |
NPN Epitaxial Silicon Transistor; Package: TO-126; No of Pins: 3; Container: Rail 2 A, 45 V, NPN, Si, POWER TRANSISTOR, TO-126
|
Fairchild Semiconductor, Corp.
|
| BD13810S |
PNP Epitaxial Silicon Transistor; Package: TO-126; No of Pins: 3; Container: Bulk 1.5 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-126
|
Fairchild Semiconductor, Corp.
|
| KSE170STU |
PNP Epitaxial Silicon Transistor; Package: TO-126; No of Pins: 3; Container: Rail 3 A, 40 V, PNP, Si, POWER TRANSISTOR, TO-126
|
Fairchild Semiconductor, Corp.
|
| MJE170STU |
PNP Epitaxial Silicon Transistor; Package: TO-126; No of Pins: 3; Container: Rail 3 A, 40 V, PNP, Si, POWER TRANSISTOR, TO-126
|
Fairchild Semiconductor, Corp.
|
| 2SB891F |
Silicon PNP Power Transistors TO-126 package
|
Savantic
|
| 2N5190 |
Silicon NPN Power Transistors TO-126 package
|
Savantic
|
| KSE340STU |
NPN Epitaxial Silicon Transistor; Package: TO-126; No of Pins: 3; Container: Rail
|
FAIRCHILD SEMICONDUCTOR CORP
|
| CSB649AC CSD669AC CSB649D |
TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 1.5A I(C) | TO-126
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 1.5A I(C) | TO-126
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 1.5A I(C) | TO-126 晶体管|晶体管|进步党| 120伏特五（巴西）总裁| 1.5AI（丙）|126
|
Spansion, Inc.
|
| BD179-6 BD175-16 BD178-6 |
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 3A I(C) | TO-126
TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 3A I(C) | TO-126
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-126 晶体管|晶体管|进步党| 60V的五（巴西）总裁| 3A条一（c）|26
|
Motorola Mobility Holdings, Inc.
|
| BD235 BD234 BD234LEADFREE BD678 |
2 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-126
2 A, 45 V, PNP, Si, POWER TRANSISTOR, TO-126
4 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-126
|
CENTRAL SEMICONDUCTOR CORP
|
| 2SA1775N 2SA1775Q 2SA1775P 2SD1189FP 2SD1189FQ 2SD |
TRANSISTOR | BJT | PNP | 400V V(BR)CEO | 1A I(C) | TO-126
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | NPN | 32V V(BR)CEO | 2A I(C) | TO-126
Low-Power, SC70/SOT µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 10A I(C) | TO-126
TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 1.5A I(C) | TO-251VAR
150mA, SOT23, Low-Dropout Linear Regulators with Internal Microprocessor Reset Circuit
Low-Power, SC70/SOT µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay 晶体管|晶体管|叩| 32V的五（巴西）总裁|甲一（c）|26
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 700MA I(C) | TO-126 晶体管|晶体管|进步党| 80V的五（巴西）总裁| 700mA的一（c）|26
Low-Power, SC70/SOT µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay 晶体管|晶体管|叩| 80V的五（巴西）总裁| 700mA的一（c）|26
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 100MA I(C) | TO-126 晶体管|晶体管|叩| 300V五（巴西）总裁| 100mA的一（c）|26
|
Rohm Co., Ltd.
New Japan Radio Co., Ltd.
|
