| PART |
Description |
Maker |
| FM1208-100DC FM1208-150PC |
NVRAM (Ferroelectric Based) NVRAM中（基于铁电
|
Samtec, Inc.
Ramtron International, Corp.
|
| DS1380N DS1380SN |
NVRAM (Battery Based)
|
|
| DS1250W-150-IND |
NVRAM (Battery Based) NVRAM中（基于电池
|
3M Company
|
| DS1230AB-150-IND DS1230Y-150-IND DS1230Y-70-IND DS |
NVRAM (Battery Based) NVRAM中（基于电池
|
Epson ToYoCom, Corp.
Maxim Integrated Products, Inc.
|
| DS1245ABL-120 DS1245ABL-120-IND DS1245YL-120-IND D |
NVRAM (Battery Based) NVRAM中（基于电池
|
Abracon, Corp.
|
| U632H64BDC45 U632H64BD1C45 U632H64BSC45 U632H64DC4 |
Precision single operational amplifier
NVRAM (EEPROM Based) NVRAM中（EEPROM的基础
|
Glenair, Inc.
|
| M40Z30005 M40Z300MH6TR M40Z300MQ6TR M40Z300WMH6TR |
NVRAM CONTROLLER FOR UP TO EIGHT LPSRAM
5V or 3V NVRAM Supervisor for Up to 8 LPSRAMs 5VV NVRAM中监多达8LPSRAMs
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| M40Z111 M40Z111MH6 M40Z111MH6TR M40Z111WMH6 M40Z11 |
NVRAM CONTROLLER FOR UP TO TWO LPSRAM
5V OR 3V NVRAM SUPERVISOR FOR UP TO TWO LPSRAMs
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| GN01096B |
GaAs IC(with built-in ferroelectric)
|
Panasonic Semiconductor
|
| MR44V064A |
64k(8,192-Word ?8-Bit) FeRAM (Ferroelectric Random Access Memory)
|
LAPIS Semiconductor Co....
|
| STK10C68-L45M STK10C68-L55M |
NVRAM (EEPROM Based)
Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):16A; Gate Trigger Current (QI), Igt:80mA; Package/Case:3-TO-220; Current, It av:16A; Gate Trigger Current Max, Igt:80mA NVRAM中（EEPROM的基础
|
Electronic Theatre Controls, Inc.
|
