PART |
Description |
Maker |
TC58NYG1S3EBAI5 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 GBIT (256M × 8 BIT) CMOS NAND E2PROM
|
Toshiba Semiconductor
|
TC58NVG1S3ETA00 |
2 GBIT (256M x 8 BIT) CMOS NAND E2PROM
|
Toshiba Semiconductor
|
MX25L25735E MX25L25735EMI12G MX25L25735EZNI12G |
256M-BIT [x 1/x 2/x 4] CMOS MXSMIOTM (SERIAL MULTI I/O) FLASH MEMORY
|
Macronix International
|
MC-4R256CPE6C-653 MC-4R256CPE6C-745 MC-4R256CPE6C- |
Direct Rambus?/a> DRAM RIMM?/a> Module 256M-BYTE (128M-WORD x 16-BIT) Direct Rambus DRAM RIMM Module 256M-BYTE (128M-WORD x 16-BIT) Direct Rambus垄芒 DRAM RIMM垄芒 Module 256M-BYTE (128M-WORD x 16-BIT)
|
http:// Elpida Memory
|
M38037M6-122FP M38037M6-133FP M38037M6-154FP M3803 |
RAM size: 2048bytes single chip 8-bit CMOS microcomputer RAM size: 1536bytes single chip 8-bit CMOS microcomputer RAM size: 768bytes single chip 8-bit CMOS microcomputer SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 3803/04 Group: General Purpose, with Flash RAM size: 256bytes single chip 8-bit CMOS microcomputer RAM size: 640bytes single chip 8-bit CMOS microcomputer RAM size: 896bytes single chip 8-bit CMOS microcomputer RAM size: 512bytes single chip 8-bit CMOS microcomputer RAM size: 384bytes single chip 8-bit CMOS microcomputer RAM size: 1024bytes single chip 8-bit CMOS microcomputer RAM size: 3804bytes single chip 8-bit CMOS microcomputer RAM size: 192bytes single chip 8-bit CMOS microcomputer
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
HYB25DC256160C |
(HYB25DC256160C / HYB25DC256800C) 256M-Bit DDR SDRAM
|
Infineon Technologies Corporation
|
HY5DU561622T HY5DU56822T |
16Mx16|2.5V|8K|K/H/L|DDR SDRAM - 256M 16Mx16显示|.5V | 8K的| /升| DDR SDRAM内存- 256M 32Mx8|2.5V|8K|K/H/L|DDR SDRAM - 256M 32Mx8 |.5V | 8K的| /升| DDR SDRAM内存- 256M
|
STMicroelectronics N.V.
|
UPD23C256112AGY-XXX-MKH 23C256 UPD23C256112A UPD23 |
NAND INTERFACE 256M-BIT MASK-PROGRAMMABLE ROM
|
NEC[NEC]
|
HN29W25611T HN29W25611T-50H |
256M AND type Flash Memory More than 16,057-sector (271,299,072-bit) 256M超过16057型快闪记忆体部门71299072位) 256M AND type Flash Memory More than 16/057-sector (271/299/072-bit)
|
Hitachi,Ltd. Hitachi Semiconductor
|
AD7542JN AD7542TQ AD7542SQ AD7542AQ AD7542KP AD754 |
Precision 12-Bit CMOS Multiplying I-OUT DAC, 4-Bit Bus CMOS P-Compatible 12-Bit DAC CMOS uP-COMPATIBLE 12-BIT DAC PARALLEL, 4 BITS INPUT LOADING, 0.25 us SETTLING TIME, 12-BIT DAC, CDIP16
|
AD[Analog Devices] Analog Devices, Inc.
|
MC-4R512FKE6D-840 |
Direct Rambus DRAM RIMM Module 512M-BYTE (256M-WORD x 16-BIT)
|
Elpida Memory, Inc. ELPIDA[Elpida Memory]
|