| PART |
Description |
Maker |
| HB52RD648DC-B HB52RF648DC-B HB52RD648DC-B6BL HB52R |
512 MB Unbuffered SDRAM S.O.DIMM 64-Mword 64-bit, 133/100 MHz Memory Bus, 2-Bank Module (16 pcs of 32 M 8 components) PC133/100 SDRAM
512M; 100MHz LVTTL interface SDRAM
512M; 133MHz LVTTL interface SDRAM
|
Elpida Memory
|
| PCK2010R |
CK98R (100/133MHz) RCC Spread Spectrum System Clock Generator(CK98 (100/133MHz)RCC 扩散光谱系统时钟发生
|
Philips Semiconductors
|
| HA9P5221-5 HA-5221 FN2915 HA7-5221-5 |
100MHz, Low Noise, Precision Operational Amplifier(100MHz,低噪精密运算放大
From old datasheet system
100MHz/ Low Noise/ Precision Operational Amplifier
|
INTERSIL[Intersil Corporation]
|
| NB3N3011DTR2G NB3N3011DTG NB3N3011 |
3.3 V 100 MHz / 106.25 MHz PureEdge Clock Generator with LVPECL Differential Output(带LVPECL差分输出.3V 100MHz/106.25MHz PureEdge时钟生成 3.300兆赫/ 106.25 MHz的时钟发生器PureEdge与LVPECL差分输出（带的LVPECL差分输出.3 100MHz/106.25MHzPureEdge时钟生成器）
|
ONSEMI[ON Semiconductor]
|
| HYB25L128160AC-7.5 HYE25L128160AC-7.5 |
Specialty DRAMs - 128M (8Mx16) 133MHz 3-3-3
Specialty DRAMs - 128M (8Mx16) 133MHz 3-3-3 Ext. Temp
|
Infineon
|
| HYB39L128160AC-7.5 HYB39L128160AT-7.5 |
Specialty DRAMs - 128M (8Mx16) 133MHz 3-3-3
|
Infineon
|
| AV9342F-T |
133MHz clock generator and integrated buffer for powerPC
|
Integrated Circuit Systems
|
| KM48S8030D KM48S8030DT-GFA KM48S8030DT-GFL KM48S80 |
2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 125MHz
2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 133MHz
64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL 64Mbit SDRAM00万8位4银行同步DRAM LVTTL
2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 100MHz
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| ICS9250-09 |
CK820 Single Chip Clock, Supports 100 - 133MHz
|
ICS
|
| HY57V281620HCTP-H |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 133MHz
|
Hynix Semiconductor
|
