PART |
Description |
Maker |
HN29W12811T-60 |
128M AND type Flash Memory More than 8/029-sector (135/657/984-bit)
|
Hitachi Semiconductor
|
HN29W12811T-60 |
128M AND type Flash Memory More than 8,029-sector (135,657,984-bit)
|
Hitachi,Ltd.
|
HN29W12811 HN29W12811T-60 |
128M AND type Flash Memory More than 8,029-sector (135,657,984-bit)
|
Hitachi Semiconductor
|
MX29LV128DB |
128M-BIT [16M x 8/8M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
|
Macronix International
|
MBM29FS12DH15PBT |
BURST MODE FLASH MEMORY CMOS 128M (8M X 16) BIT
|
SPANSION LLC
|
MX25L12836EMI10G MX25L12836EZNI10G |
128M-BIT [x 1/x 2/x 4] CMOS MXSMIOTM (SERIAL MULTI I/O) FLASH MEMORY
|
Macronix International
|
W29GL128CH9C W29GL128CL9C |
128M-BIT 3.0-VOLT PARALLEL FLASH MEMORY WITH PAGE MODE
|
Winbond
|
MX29LA129MLTI-90R MX29GL033MBMC-10G MX29GL033MBMC- |
128M-BIT SINGLE VOLTAGE 3V ONLY UNIFORM SECTOR FLASH MEMORY
|
MCNIX[Macronix International]
|
MX28F320J3 |
(MX28F128J3 - MX28F640J3) 128M [x8/x16] SINGLE 3V PAGE MODE FLASH MEMORY
|
Macronix International
|
ULS-2821R ULS-2803H ULS-2823H ULS-2822 ULS-2815H U |
HIGH-VOLTAGE/ HIGH-CURRENT DARLINGTON ARRAYS HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAYS 高电压,大电流达林顿阵列 Flash - NOR IC; Memory Type:Flash; Access Time, Tacc:110ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:56-TSOP; Memory Configuration:128K x 16; Memory Size:128MB; NOR Flash Type:Page Mode Access RoHS Compliant: Yes 高电压,大电流达林顿阵列 50 V, 8 CHANNEL, NPN, Si, POWER TRANSISTOR
|
Allegro MicroSystems, Inc.
|