| PART |
Description |
Maker |
| IRF5M5210 IRF5M5210D IRF5M5210UPBF IRF5M5210-15 |
-100V Single P-Channel Hi-Rel MOSFET in a TO-254AA package
34 A, 100 V, 0.07 ohm, P-CHANNEL, Si, POWER, MOSFET
POWER MOSFET P-CHANNEL(Vdss=-100V, Rds(on)=0.07ohm, Id=-34A)
Avalanche Energy Ratings
|
IRF[International Rectifier]
|
| CS5464-IS |
Three-channel, Single-phase Power/Energy IC
|
Cirrus Logic, Inc.
|
| IRFF9132 IRFF9130 |
Avalanche-Energy-Rated P-Channel Power MOSFETs
|
New Jersey Semi-Conduct...
|
| IRF440R IRFP442R IRFP443R IRFP441R |
Avalanche Energy Rated N-Channel Power MOSFETs
|
New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conductor P...
|
| IRF5M4905 IRF5M4B905 |
Avalanche Energy Ratings
THRU-HOLE (TO-254AA) 55V, P-CHANNEL
POWER MOSFET P-CHANNEL(Vdss=-55V, Rds(on)=0.03ohm, Id=-35A*)
|
International Rectifier
|
| PHD3N40E PHP3N40E PHB3N40E |
PowerMOS transistors Avalanche energy rated 2.5 A, 400 V, 3.5 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| PHW20N50E |
PowerMOS transistors Avalanche energy rated 20 A, 500 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| MTH8N50E |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
|
MOTOROLA[Motorola, Inc]
|
| MTB9N25E MTB9N25E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 9.0 AMPERES 250 VOLTS
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| CBC915-ACA CBC915-AIA-TR1 CBC915-ACA-TR5 CBC915-AC |
EnerChip?/a> Energy Processor for Energy Harvesting Applications
|
Cymbet Corporation
http://
|
| MTB3N60E_D ON2423 MTB3N60E MTB3N60E-D ON2422 |
From old datasheet system
TMOS POWER FET 3.0 AMPERES 600 VOLTS
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
|
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
