| PART |
Description |
Maker |
| PE4283 4283-00 4283-01 4283-02 4283-51 4283-52 |
SPDT High Power UltraCMOS?/a> DC - 4.0 GHz RF Switch
SPDT High Power UltraCMOSDC - 4.0 GHz RF Switch
SPDT High Power UltraCMOS⑩ DC - 4.0 GHz RF Switch
|
http://
PEREGRINE[Peregrine Semiconductor Corp.]
|
| MTB10N40E MTB10N40E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 10 AMPERES
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTB2N40E MTB2N40E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 2.0 AMPERES 400 VOLTS
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTB3N60E_D ON2423 MTB3N60E MTB3N60E-D ON2422 |
From old datasheet system
TMOS POWER FET 3.0 AMPERES 600 VOLTS
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
|
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| MTD12N06EZL_D ON2462 MTD12N06EZL-D |
TMOS E-FET High Energy Power FET DPAK for Surface Mount or Insertion Mount N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 12 AMPERES 60 VOLTS
|
ON Semiconductor
|
| TPD03-02G18BS |
2-18GHz 3-Way Power Divider
|
Transcom, Inc.
|
| TPD04-06G18S |
6-18GHz 4-Way Power Divider
|
Transcom, Inc.
|
| TPD02-06G18S |
18GHz 2-Way Power Divider
|
Transcom, Inc.
|
| UPG2010TB UPG2010TB-E3 |
High power single control L-band SPDT switch.
NEC’s HIGH POWER SINGLE CONTROL L-BAND SPDT SWITCH
NECs HIGH POWER SINGLE CONTROL L-BAND SPDT SWITCH
|
NEC
ETC
California Eastern Laboratories
|
| 2SK2132 2SK2132-T |
High-voltage power MOS FET 180V/4A
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
| CXG1189AXR |
High Power SPDT Switch
|
Sony Corporation
|
