| PART |
Description |
Maker |
| MT4LDT464AG MT4LDT264AG MT4LDT164AG |
4 Meg x 64 Nonbuffered DRAM DIMMs(4 M x 64无缓冲动态RAM双列直插存储器模
1 Meg x 64 Nonbuffered DRAM DIMMs(1M x 64无缓冲动态RAM双列直插存储器模 1梅格× 64 Nonbuffered内存插槽00万64无缓冲动态RAM的双列直插存储器模块
2 Meg x 64 Nonbuffered DRAM DIMMs(2M x 64无缓冲动态RAM双列直插存储器模 2梅格× 64 Nonbuffered内存插槽00万64无缓冲动态RAM的双列直插存储器模块
|
Micron Technology, Inc.
|
| MT4C40005 MT4C40004 |
4 MEG x 4 DRAM
|
MICRON[Micron Technology]
|
| MT9LD272A |
2, 4 MEG x 72 NONBUFFERED DRAM DIMMs
|
Micron Technology, Inc.
|
| AS4SD4M16DG-8_IT AS4SD4M16DG-8_XT AS4SD4M16DG-10_I |
4 Meg x 16 SDRAM Synchronous DRAM Memory
|
Austin Semiconductor
|
| LC382161T-17 |
2 MEG(65536 words x 16 bits x 2 banks) Synchronous DRAM
|
Sanyo Semicon Device
|
| MT4C4005 |
1 MEG x 4 DRAM FAST PAGE MODE WRITE-PER-BIT
|
MICRON[Micron Technology]
|
| MT4C4004 |
1 MEG x 4 DRAM QUAD CAS PARITY, FAST PAGE MODE
|
MICRON[Micron Technology]
|
| AS4LC1M168 AS4LC1M16883C AS4LC1M16 |
1 MEG x 16 DRAM 3.3V, EDO PAGE MODE, OPTIONAL EXTENDED REFRESH
|
ASI
ETC[ETC]
AUSTIN[Austin Semiconductor]
|
| MT4C4004J |
1 MEG x 4 DRAM 5V, QUAD CAS PARITY, FAST PAGE MODE
|
MICRON[Micron Technology]
|
| MT4C4001JECG-10_883C MT4C4001JECG-10_IT MT4C4001JE |
1 MEG x 4 DRAM Fast Page Mode DRAM
|
http://
Austin Semiconductor
|
| 97SD3248RPQK |
1.5Gb SDRAM 8-Meg X 48-Bit X 4-Banks 32M X 48 SYNCHRONOUS DRAM, 6 ns, PQFP132
|
Maxwell Technologies, Inc
|
