| PART |
Description |
Maker |
| MJD44H11 MJD44H11-001 MJD45H11-001 MJD45H11T4G MJD |
SILICON POWER TRANSISTORS 8 A, 80 V, NPN, Si, POWER TRANSISTOR
Power 10A 80V PLA NPN
Power 10A 80V PLA PNP
|
ONSEMI[ON Semiconductor]
|
| AM29C833ASC |
600 MIL PLA SO GULL-WG CMOS SERIES, 8-BIT TRANSCEIVER, TRUE OUTPUT, PDSO24
|
Advanced Micro Devices, Inc.
|
| 15-80-0109 0015800109 70567-0275 A-70567-0275 |
2.54mm (.100) Pitch C-Grid? Header, Through Hole without Peg, Dual Row, Vertical, Shrouded, High Temperature, 10 Circuits, 0.38μm (15μ) Gold, (Au) Selective Plating
2.54mm (.100) Pitch C-Grid庐 Header, Through Hole without Peg, Dual Row, Vertical, Shrouded, High Temperature, 10 Circuits, 0.38渭m (15渭) Gold, (Au) Selective Pla
Molex Electronics Ltd.
|
Molex Electronics Ltd.
|
| 15-80-0129 0015800129 A-70567-0276 |
2.54mm (.100) Pitch C-Grid? Header, Through Hole without Peg, Dual Row, Vertical, Shrouded, High Temperature, 12 Circuits, 0.38μm (15μ) Gold, (Au) Selective Plating
2.54mm (.100) Pitch C-Grid庐 Header, Through Hole without Peg, Dual Row, Vertical, Shrouded, High Temperature, 12 Circuits, 0.38渭m (15渭) Gold, (Au) Selective Pla
Molex Electronics Ltd.
|
Molex Electronics Ltd.
|
| A-70567-0349 15-80-1221 0015801221 |
2.54mm (.100) Pitch C-Grid庐 Header, Through Hole without Peg, Dual Row, Vertical, Shrouded, High Temperature, 22 Circuits, 0.76渭m (30渭) Gold, (Au) Selective Pla
2.54mm (.100) Pitch C-Grid? Header, Through Hole without Peg, Dual Row, Vertical, Shrouded, High Temperature, 22 Circuits, 0.76μm (30μ) Gold, (Au) Selective Plating
|
Molex Electronics Ltd.
|
| A-70567-0343 15-80-1101 0015801101 |
2.54mm (.100) Pitch C-Grid庐 Header, Through Hole without Peg, Dual Row, Vertical, Shrouded, High Temperature, 10 Circuits, 0.76渭m (30渭) Gold, (Au) Selective Pla
2.54mm (.100) Pitch C-Grid? Header, Through Hole without Peg, Dual Row, Vertical, Shrouded, High Temperature, 10 Circuits, 0.76μm (30μ) Gold, (Au) Selective Plating
|
Molex Electronics Ltd.
|
| A-70567-0364 15-80-1521 |
2.54mm (.100) Pitch C-Grid庐 Header, Through Hole without Peg, Dual Row, Vertical, Shrouded, High Temperature, 52 Circuits, 0.76渭m (30渭) Gold, (Au) Selective Pla
2.54mm (.100) Pitch C-Grid? Header, Through Hole without Peg, Dual Row, Vertical, Shrouded, High Temperature, 52 Circuits, 0.76μm (30μ) Gold, (Au) Selective Plating
|
Molex Electronics Ltd.
|
| HZU16B1TRF-E HZU2.7B1TLF HZU2.0BTLF HZU2.4BTRF-E H |
15.69 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
2.625 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
2.05 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
2.45 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
2.925 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
3.225 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
2.25 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
3.525 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
3.075 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
3.375 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
2.775 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
7.21 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
5.795 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
4.515 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
30 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
23.445 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
21.325 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
|
|
| MDA920A6 MDA920A4 MDA920A7 MDA920A2 MDA920A5 MDA92 |
1.5 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
1.5 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
1.5 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
1.5 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE
1.5 A, 300 V, SILICON, BRIDGE RECTIFIER DIODE
1.5 A, 25 V, SILICON, BRIDGE RECTIFIER DIODE
1.5 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE
1.5 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
1.5 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
|
Motorola Mobility Holdings, Inc.
|
| 1N957B 1N959B 1N963B 1N962B 1N960B 1N958B 1N961B |
Silicon Z-Diodes(绋冲??靛?10V锛?ǔ瀹??娴?0mA???榻?撼浜??绠?
Silicon Z-Diodes(稳定电压9.1V，稳定电0mA的硅齐纳二极
Silicon Z-Diodes(稳定电压7.5V，稳定电0mA的硅齐纳二极
From old datasheet system
Silicon Z?Diodes
|
Vishay Intertechnology,Inc.
TFUNK[Vishay Telefunken]
|
|
