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IBM0116405P - 4M x 4 12/10 EDO DRAM(16M动态RAM(超页面模式读写并带22条地址线,其中12条为行地址选通,10条为列地址选通)) 4米4 120日EDO公司的DRAM,600位动态随机存储器(超页面模式读写并带22条地址线,其中12条为行地址选通,10条为列地址选通) 4M x 4 12/10 EDO DRAM(16M浣??ㄦ?RAM锛??椤甸?妯″?璇诲?骞跺甫22?″???嚎锛??涓?2?′负琛????????10?′负?????????)

IBM0116405P_1637746.PDF Datasheet

 
Part No. IBM0116405P IBM0116405B
Description 4M x 4 12/10 EDO DRAM(16M动态RAM(超页面模式读写并带22条地址线,其中12条为行地址选通,10条为列地址选通)) 4米4 120日EDO公司的DRAM,600位动态随机存储器(超页面模式读写并带22条地址线,其中12条为行地址选通,10条为列地址选通)
4M x 4 12/10 EDO DRAM(16M浣??ㄦ?RAM锛??椤甸?妯″?璇诲?骞跺甫22?″???嚎锛??涓?2?′负琛????????10?′负?????????)

File Size 379.10K  /  31 Page  

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IBM Microeletronics
International Business Machines, Corp.



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 Full text search : 4M x 4 12/10 EDO DRAM(16M动态RAM(超页面模式读写并带22条地址线,其中12条为行地址选通,10条为列地址选通)) 4米4 120日EDO公司的DRAM,600位动态随机存储器(超页面模式读写并带22条地址线,其中12条为行地址选通,10条为列地址选通) 4M x 4 12/10 EDO DRAM(16M浣??ㄦ?RAM锛??椤甸?妯″?璇诲?骞跺甫22?″???嚎锛??涓?2?′负琛????????10?′负?????????)


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From old datasheet system
Infineon
SIEMENS[Siemens Semiconductor Group]
AS4C256K16E0 AS4C256K16E0-30JC AS4C256K16E0-35JC A 5V 256K x 16 CM0S DRAM (EDO), 50ns RAS access time
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Alliance Semiconductor Corporation
ALSC
IS41C4100-35J IS41LV4100-60JI IS41C4100 IS41C4100- 1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 1M X 4 EDO DRAM, 60 ns, PDSO20
Integrated Silicon Solution, Inc.
ISSI[Integrated Silicon Solution, Inc]
Integrated Silicon Solution Inc
HM5118165LJ-5 HM5118165LJ-7 HM5118165TT-7 HM511816 16M EDO DRAM (1-Mword x 16-bit) 1 k Refresh
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1M X 16 EDO DRAM, 60 ns, PDSO44
Hitachi,Ltd.
HYM72V1645GU-60 HYM72V1645GU-50 HYM64V1645GU-60 HY 3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 3.3 16米x 64位江户内.3V6米x 72位江户记忆体模组
3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 16M X 72 EDO DRAM MODULE, 60 ns, DMA168
3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 16M X 64 EDO DRAM MODULE, 60 ns, DMA168
16M x 64 Bit DRAM Module unbuffered
16M x 72 Bit ECC DRAM Module unbuffered
SIEMENS A G
SIEMENS AG
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SIEMENS[Siemens Semiconductor Group]
HM5117805LJ-5 HM5117805S-6 HM5117805TT-5 HM5117805 16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh 2M X 8 EDO DRAM, 50 ns, PDSO28
Elpida Memory, Inc.
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IS41LV16100-50T IS41LV16100-50KI IS41LV16100-50TL 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 1M X 16 EDO DRAM, 60 ns, PDSO44
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 1M X 16 EDO DRAM, 50 ns, PDSO44
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Integrated Silicon Solution Inc
Integrated Silicon Solution, Inc.
HYM72V1005GU-60 HYM72V1005GU-50 HYM64V1005GU-60 HY 1M x 72 Bit ECC DRAM Module unbuffered
1M x 64 Bit DRAM Module unbuffered
From old datasheet system
3.3V 1M x 64-Bit EDO-DRAM Module 3.3V 1M x 72-Bit EDO-DRAM Module 1M X 72 EDO DRAM MODULE, 60 ns, DMA168
3.3V 1M x 64-Bit EDO-DRAM Module 3.3V 1M x 72-Bit EDO-DRAM Module 1M X 64 EDO DRAM MODULE, 60 ns, DMA168
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
HM5165405F HM5164405F 64 M EDO DRAM (16-Mword ×4-bit)(64M EDO DRAM (16-M×4-)
Hitachi,Ltd.
 
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