| PART |
Description |
Maker |
| K7A803600M K7A801800M |
256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM Data Sheet
256Kx36 & 512Kx18 Synchronous SRAM
|
Samsung Electronic
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K7A803601M K7A801801M K7A801809B K7A803609B |
256Kx36 & 512Kx18 Synchronous SRAM
256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
256K x 36 & 512K x 18-Bit Synchronous Pipelined Burst SRAM Data Sheet
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K7A403200B K7A403200B-QC K7A403201B K7A403201B-QC |
256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
128Kx36/x32 & 256Kx18 Synchronous SRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K7A803600B06 |
256Kx36 & 512Kx18 Synchronous SRAM
|
Samsung semiconductor
|
| K7P803666B K7P801866B |
256Kx36 AND 512Kx18 Synchronous Pipelined SRAM
|
SAMSUNG[Samsung semiconductor]
|
| KM718V987 |
(KM736V887 / KM718V987) 256Kx36 & 512Kx18 Synchronous SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K7P801811M K7P803611M |
256Kx36 & 512Kx18 Synchronous Pipelined SRAM Data Sheet
|
Samsung Electronic
|
| K7N801809B K7N803609B |
256Kx36 & 512Kx18 Pipelined NtRAM
|
Samsung semiconductor
|
| GVT71256ZC36 |
(GVT7xxxx) 256Kx36/512Kx18 Pipelined SRAM With Nobltm Architecture
|
Cypress Semiconductor
|
| HY57V64820HGLTP-5 HY57V64820HGLTP-55 HY57V64820HGL |
4 Banks x 2M x 8Bit Synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
4 Banks x 2M x 8Bit Synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, PDSO54
CAP 0.01UF 50V 10% X7R SMD-0805 TR-13 PLATED-NI/SN 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 220uF; Voltage: 25V; Case Size: 8x11.5 mm; Packaging: Bulk
|
Hynix Semiconductor, Inc.
http://
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
| GS820H32AQ-138I GS820H32AQ-6I GS820H32AQ-4I GS820H |
100MHz 12ns 64K x 32 2M synchronous burst SRAM
64K X 32 CACHE SRAM, 12 ns, PQFP100
64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 11 ns, PQFP100
64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 9.7 ns, PQFP100
117MHz 11ns 64K x 32 2M synchronous burst SRAM
66MHz 18ns 64K x 32 2M synchronous burst SRAM
150MHz 9ns 64K x 32 2M synchronous burst SRAM
138MHz 9.7ns 64K x 32 2M synchronous burst SRAM
|
GSI Technology, Inc.
|
| IS42SM81600E IS42SM16800E-6BLI IS42RM81600E-7TL IS |
128Mb Mobile Synchronous DRAM
8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Integrated Silicon Solution, Inc
INTEGRATED SILICON SOLUTION INC
|
