| PART |
Description |
Maker |
| KM736V849 |
256Kx36-Bit No Turnaround SRAM(256Kx36位数据流无返回静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K7P801811B-HC27 K7P801811B-HC30 K7P801811B-HC25 K7 |
256Kx36 & 512Kx18 Synchronous Pipelined SRAM
256Kx36 & 512Kx18 Synchronous Pipelined SRAM 256Kx36
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K7A803600MNBSP K7A801800MNBSP K7A803600M K7A801800 |
256Kx36 & 512Kx18 Synchronous SRAM
|
SAMSUNG[Samsung semiconductor]
|
| KM736V887 |
256Kx36 & 512Kx18 Synchronous SRAM
|
Samsung semiconductor
|
| K7P801811M K7P803611M |
256Kx36 & 512Kx18 Synchronous Pipelined SRAM Data Sheet
|
Samsung Electronic
|
| TC55WD1618FF-133 TC55WD1618FF-167 TC55WD1618FF-150 |
1,048,576-WORD BY 18-BIT SYNCHRONOUS NO-TURNAROUND STATIC RAM
|
TOSHIBA
|
| TC55VL836FFI-83 |
262,144-WORD BY 36-BIT SYNCHRONOUS NO-TURNAROUND STATIC RAM
|
TOSHIBA
|
| TC55VL836FF-83 |
262,144-WORD BY 36-BIT SYNCHRONOUS NO-TURNAROUND STATIC RAM
|
TOSHIBA
|
| TC55VL818FFI-83 |
524,288-WORD BY 18-BIT SYNCHRONOUS NO-TURNAROUND STATIC RAM
|
TOSHIBA
|
| R1LP0408C R1LP0408CSB-5SI R1LP0408CSB-7LI R1LP0408 |
Wide Temperature Range Version 4 M SRAM (512-kword ??8-bit)
R1LP0408C-I Series Datasheet 78K/AUG.01.03
Standard Thick Film Chip Resistor: 10 ohms through 10 megohms, 5 %, 200 ppm, .100 W
Wide Temperature Range Version 4 M SRAM (512-kword 8-bit)
Wide Temperature Range Version 4 M SRAM (512-kword × 8-bit)
Wide Temperature Range Version 4 M SRAM (512-kword 8-bit)
Wide Temperature Range Version 4 M SRAM (512-kword 】 8-bit)
Memory>Low Power SRAM
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Renesas
|
| M5M5V5636UG-16 M5M5V5636GP-16I |
Memory>Fast SRAM>Network SRAM
18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM
|
Renesas
|
