| PART |
Description |
Maker |
| MSM514400E-60SJ MSM514400E-60TS-K MSM514400EL-XXTS |
1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE 1,048,576字4位动态随机存储器：快速页面模式型
|
OKI SEMICONDUCTOR CO., LTD.
OKI[OKI electronic componets]
|
| MSM51V4400E MSM51V4400E-10 MSM51V4400E-70 |
1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE 1,048,576字4位动态随机存储器：快速页面模式型
|
OKI SEMICONDUCTOR CO., LTD.
OKI electronic componets
|
| ADR380 ADR380ART-REEL ADR380ART-REEL7 ADR381 ADR38 |
2.048 V and 2.5 V Bandgap Voltage References
2.048 V Bandgap Voltage Reference
Precision Low-Drift 2.048 V/2.500 V SOT-23 Voltage References
|
AD[Analog Devices]
|
| IDT7290820 IDT7290820PQF IDT7290820PF IDT7290820BC |
2K x 2K TSI, 16 I/O at 2/4/8Mbps, 5.0V
TSI-TDM Switches
TIME SLOT INTERCHANGE DIGITAL SWITCH 2,048 x 2,048
|
IDT[Integrated Device Technology]
|
| MSC2313258D-XXDS2 MSC2313258D-XXBS2 MSC2313258D MS |
From old datasheet system
1M X 32 EDO DRAM MODULE, 60 ns, SMA72 SIMM-72
1,048,576-word x 32-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE WITH EDO 1,048,576字32位动态随机存储器模块：快速页面模式型与江
|
OKI electronic components
OKI electronic componets
OKI SEMICONDUCTOR CO., LTD.
Oki Electric Industry Co., Ltd.
|
| MSM27C1602CZ |
1,048,576-Word x 16-Bit or 2,097,152-Word x 8-Bit One Time PROM 1,048,576字16位或2097152字8位一次性可编程
|
OKI electronic components
OKI electronic componets
OKI SEMICONDUCTOR CO., LTD.
|
| AM29F080 AM29F080-85FC |
Am29F080 - 8 Megabit (1.048.576 x 8-Bit) CMOS 5.0 Volt-only. Sector Erase Flash Memory Am29F080 - 8兆（1.048.576 × 8位）的CMOS 5.0伏特只。扇区擦除闪
1M X 8 FLASH 5V PROM, 85 ns, PDSO40
|
Laird Technologies, Inc.
SPANSION LLC
|
| HM514400B HM514400BL HM514400C HM514400CL HM514400 |
1,048,576-word x 4-bit dynamic random access memory, 80ns
1,048,576-word x 4-bit dynamic random access memory, 60ns
1/048/576-word X 4-bit Dynamic Random Access Memory
1,048,576-word x 4-bit dynamic random access memory, 70ns
|
Hitachi Semiconductor
|
| GM71C4403DLJ-80 GM71C4403D-80 GM71C4403DT-70 GM71C |
MB 32C 32#20 PIN PLUG
Single Output LDO, 1.0A, Fixed (5.0V), Low Noise, Fast Transient Response 6-SOT-223 -40 to 85
1,048,576 Words x Bit Organization 1,048,576字×位组织
Single Output LDO, 1.0A, Adj.(1.295 to 5.5V), Low Noise, Fast Transient Response 5-DDPAK/TO-263 -40 to 85
|
LG Corp.
LG, Corp.
|
| KS24C010 KS24C021 KS24C011 KS24C020 |
1.024 / 2.048-BIT SERIAL EEPROM
1,024/2,048-bit serial eeprom 1,024 / 2,048位串行EEPROM
(KS24C010 / KS24C011 / KS24C020 / KS24C021) 1024/2048-bit serial eeprom
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| THM361020S-10 THM361020S-80 THM361020SG-10 THM3610 |
Chip-on-Glass (COG) Technology, 16 Characters x 2 Lines
1048576 WORDS x 36 BIT DYNAMIC RAM MODULE
1,048,576 WORDS x 36 BIT DYNAMIC RAM MODULE
1/048/576 WORDS x 36 BIT DYNAMIC RAM MODULE
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| ADR423 ADR425 ADR420 ADR421 |
2.048 V, 2.5 V, 3.0V, and 5.0V XFETVoltage References
2.048 V and 2.5 V XFETVoltage References
|
Analog Devices
|
