| PART |
Description |
Maker |
| MSM51V16165D MSM51V16165DSL MSM51V16165D-70JS MSM5 |
1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
From old datasheet system
DRAM / FAST PAGE MODE TYPE
|
OKI electronic components
OKI[OKI electronic componets]
|
| MSM51V16165A |
1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
DRAM / FAST PAGE MODE TYPE
|
OKI electronic components
OKI[OKI electronic componets]
|
| MSM51V4400 MSM51V4400L MSM51V4400SL |
DRAM / FAST PAGE MODE TYPE
1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
|
OKI[OKI electronic componets]
|
| MSM51V16400A |
DRAM / FAST PAGE MODE TYPE
4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
|
OKI SEMICONDUCTOR CO., LTD.
OKI[OKI electronic componets]
OKI electronic components
|
| MSM51V16160D MSM51V16160DSL |
DRAM / FAST PAGE MODE TYPE
1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
|
OKI[OKI electronic componets]
OKI electronic components
|
| MSM51V16100 |
16,777,216-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
DRAM / FAST PAGE MODE TYPE
|
OKI electronic components
OKI[OKI electronic componets]
OKI SEMICONDUCTOR CO., LTD.
|
| MSM51V16160F |
DRAM / FAST PAGE MODE TYPE
1,048,576-Word X 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
|
OKI SEMICONDUCTOR CO., LTD.
OKI[OKI electronic componets]
|
| K4F160412D K4F160411D-BL50 |
4M x 4Bit CMOS Dynamic RAM with Fast Page Mode 4米4位的CMOS动态随机存储器的快速页面模
4M X 4 FAST PAGE DRAM, 50 ns, PDSO24
|
Samsung Semiconductor Co., Ltd.
|
| MT8LD264G-7XS MT8LD264G-7S |
x64 EDO Page Mode DRAM Module
x64 Fast Page Mode DRAM Module X64的快速页面模式内存模
|
Micron Technology, Inc.
|
| A42L0616S-45L A42L0616S-50L A42L0616S-60 A42L0616S |
45ns 1M x 16bit CMOS dynamic ram with EDO page mode
50ns 1M x 16bit CMOS dynamic ram with EDO page mode
60ns 1M x 16bit CMOS dynamic ram with EDO page mode
|
AMIC Technology
|
| K4F16708112D K4F160811D-B K4F160812D K4F160812D-B |
2M x 8Bit CMOS Dynamic RAM with Fast Page Mode Data Sheet
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle.
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle.
|
Samsung Electronic
|
| SST29EE010-150-4C-EH SST29EE010-250-4C-NH SST29EE0 |
1 Mbit (128K x 8) page-mode EEPROM
From old datasheet system
1 Mbit (128K x8) Page-Mode EEPROM
|
SST[Silicon Storage Technology Inc]
SST[Silicon Storage Technology, Inc]
|
