| PART |
Description |
Maker |
| NE3512S02 NE3512S02-T1C-A NE3512S02-T1D-A |
HETERO JUNCTION FIELD EFFECT TRANSISTOR 异质结型场效应晶体管
|
California Eastern Laboratories, Inc.
|
| NJ26 |
Silicon Junction Field-Effect Transistor
|
InterFET Corporation
|
| NJ26A |
Silicon Junction Field-Effect Transistor
|
INTERFET[InterFET Corporation]
|
| NJ1800DL |
Silicon Junction Field-Effect Transistor
|
InterFET Corporation
|
| 2N4341 2N4338 2N4339 2N4340 |
N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR
|
CENTRAL[Central Semiconductor Corp]
|
| J111 J112 J113 |
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORS
|
Micro Electronics
|
| SMPJ232 |
N-Channel silicon junction field-effect transistor
|
InterFET Corporation
|
| SMP5461 SMP5462 |
P-Channel silicon junction field-effect transistor
|
InterFET Corporation
|
| 2N5457 2N5458 |
SILICON N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS
|
New Jersey Semi-Conductor Products, Inc.
|
| SMPJ212 |
N-Channel silicon junction field-effect transistor
|
InterFET Corporation
|
