PART |
Description |
Maker |
2SD1760 2SD1864 2SD1864P 2SD1760Q |
Power Transistor 50V, 3A 功率晶体0VA TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 3A I(C) | TO-252 晶体管|晶体管|叩| 50V五(巴西)总裁| 3A条一(c)|52 TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 3A I(C) | SIP
|
Rohm Co., Ltd. Rohm CO.,LTD. ROHM[Rohm]
|
CDD2395F CDD2395 |
2.000W Medium Power NPN Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 60 - 320 hFE. TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 3A I(C) | TO-220AB
|
Continental Device India Limited
|
2SB1143 2SD1683 2SB1143S |
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 4A I(C) | TO-126 50V/4A Switching Applications
|
SANYO[Sanyo Semicon Device]
|
2SC4295M 2SC4295MN 2SC4295MP 2SC4295MQ 2SD2279P 2S |
TRANSISTOR | BJT | PNP | 600V V(BR)CEO | 200MA I(C) | SIP 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 200MA I(C) | SC-71 晶体管|晶体管|叩| 50V五(巴西)总裁| 200mA的一(c)|律师- 71 TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 200MA I(C) | SIP 晶体管|晶体管|叩| 50V五(巴西)总裁| 200mA的一(c)|园区 TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 5A I(C) | SIP 晶体管|晶体管|进步党| 50V五(巴西)总裁| 5A条一(c)|园区 晶体管|晶体管|进步党| 50V五(巴西)总裁| 150毫安一(c)|园区 晶体管|晶体管|叩| 50V五(巴西)总裁| 5A条一(c)|律师- 71 5个引#181;带看门狗和手动复位的P监控电路 晶体管|晶体管|叩| 25V的五(巴西)总裁| 50mA的一(c)|园区 晶体管|晶体管|叩| 20V的五(巴西)总裁| 1A条一(c)|律师- 71 晶体管|晶体管|叩| 400V五(巴西)总裁| 100mA的一(c)|律师- 71 晶体管|晶体管|叩| 25V的五(巴西)总裁| 200mA的一(c)|律师- 71 TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 150MA I(C) | SIP TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 3A I(C) | SIP TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 1A I(C) | SC-71 TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 5A I(C) | SIP TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 1A I(C) | SIP TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 1A I(C) | SIP 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 1A I(C) | SC-71 TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 5A I(C) | SIP TRANSISTOR|BJT|NPN|400VV(BR)CEO|100MAI(C)|SC-71
|
Power Integrations, Inc.
|
IRF7103Q IRF7103QTR IRF7103QN |
N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 50V V(BR)DSS | 3A I(D) | SO Power MOSFET(Vdss=50V) 50V Dual N-Channel HEXFET Power MOSFET in a SO-8 package 50V Single DUAL-Channel HEXFET Power MOSFET in a SO-8 package
|
International Rectifier
|
CSA1162Y-3E CSA1162 CSA1162GR_G-3F CSA1162GRG-3F C |
0.150W Low Frequency PNP SMD Transistor. 50V Vceo, 0.150A Ic, 200 - 400 hFE. Complementary CSC2712 LOW FREQUENCY GENERAL PURPOSE AMPLIFIER TRANSISTOR TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 150MA I(C) | SOT-23 晶体管|晶体管|进步党| 50V五(巴西)总裁| 150毫安一c)| SOT - 23封装
|
CDIL[Continental Device India Limited]
|
2SB1443 2SA1797 A5800341 2SC4672T100P 2SC4672T100Q |
Power Transistor (-50V/ -2A) Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) From old datasheet system Power Transistor (-50V, -2A) TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 2A I(C) | TO-243 SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 2A I(C) | SIP SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 晶体管|晶体管|叩| 50V五(巴西)总裁|甲一(c)|43
|
Rohm Co., Ltd.
|
CFA1012 CFA1012O CFC2562O CFA1012Y CFC2562Y |
25.000W Medium Power NPN Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 240 hFE. Complementary CFA1012Y 25.000W Medium Power NPN Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 140 hFE. Complementary CFA1012O 25.000W Medium Power PNP Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 140 hFE. Complementary CFC2562O PNP SILICON PLANAR POWER TRANSISTOR 进步党硅平面功率晶体 25.000W Medium Power PNP Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 120 - 240 hFE. Complementary CFC2562Y
|
Continental Device India, Ltd. CDIL[Continental Device India Limited] Continental Device Indi...
|
CSB1065 CSB1065N CSB1065R CSB1065P CSB1065Q |
10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 56 - 390 hFE. Complementary CSD1506 10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 56 - 120 hFE. Complementary CSD1506N 10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 180 - 390 hFE. Complementary CSD1506R 10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 82 - 180 hFE. Complementary CSD1506P 10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 120 - 270 hFE. Complementary CSD1506Q
|
Continental Device India Limited
|
DTA124XCA DTA124XCAT116 |
PNP -100mA -50V Digital Transistor (Bias Resistor Built-in Transistor)
|
ROHM
|
ITC1100 |
1000 WATT, 50V, Pulsed Avionics 1030 MHz Common base bipolar transistor 1000 WATT, 50V, Pulsed
|
List of Unclassifed Manufacturers ETC GHz Technology
|