PART |
Description |
Maker |
TC55W800FT-70 |
512K Word x 16 Bit/1M Word x 8 Bit Full CMOS Static RAM(512K x 16 1M x 8 CMOS 静态RAM) 12k字16 Bit/1M字8位全部的CMOS静态RAM(为512k字16 100万字× 8位的CMOS静态RAM)的
|
Toshiba Corporation Toshiba, Corp.
|
UPD4482161GF-A65 UPD4482161GF-A65Y UPD4482181GF-A6 |
8M-bit(512K-word x 16-bit) Synchronous SRAM 8M-bit(512K-word x 18-bit) Synchronous SRAM 8M-bit(256K-word x 32-bit) Synchronous SRAM 8M-bit(256K-word x 36-bit) Synchronous SRAM
|
NEC
|
MSM538022E OKISEMICONDUCTORCO.LTD.-MSM538022E MSM5 |
512K X 16 MASK PROM, 80 ns, PDSO44 From old datasheet system 524,288-Word x 16-Bit or 1,048,576-Word x 8-Bit MASKROM
|
OKI ELECTRIC INDUSTRY CO LTD OKI electronic componets OKI SEMICONDUCTOR CO., LTD.
|
MR27V6452D |
4,194,304-Word x 16-Bit or 8,388,608-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM From old datasheet system
|
OKI
|
MR27V452D |
262,144-Word x 16-Bit or 524,288-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM From old datasheet system
|
OKI
|
MSM27C1652CZ |
1,048,576-Word x 16-Bit or 2,097,152-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM
|
OKI electronic components OKI electronic componets OKI SEMICONDUCTOR CO., LTD.
|
5216165 |
1,048,576-word ′ 8-bit ′ 2-bank Synchronous Dynamic RAM
(SSTL-3)
2,097,152-word ′ 4-bit ′ 2-bank Synchronous Dynamic RAM
(SSTL-3) From old datasheet system
|
hitachi
|
M6MGT331S4BKT M6MGB331S4BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD B
|
Renesas Electronics Corporation
|
M12L64322A-6TG M12L64322A-5BG |
512K x 32 Bit x 4 Banks Synchronous DRAM 2M X 32 SYNCHRONOUS DRAM, 5.5 ns, PDSO86 512K x 32 Bit x 4 Banks Synchronous DRAM 2M X 32 SYNCHRONOUS DRAM, 4.5 ns, PBGA90
|
Elite Semiconductor Memory Technology, Inc.
|
UPD448012GY-C10X-MJH UPD448012GY-C85X-MJH UPD44801 |
8M-bit(512K-word x 16-bit) Low power SRAM
|
NEC
|