PART |
Description |
Maker |
2SD2403 2SD2403GZ 2SD2403-GX-AZ |
NPN epitaxial type silicon transistor NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-243 晶体管|晶体管|叩| 60V的五(巴西)总裁| 3A条一(c)|43 3 A, 60 V, NPN, Si, POWER TRANSISTOR
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NEC[NEC] NEC, Corp. NEC Corp.
|
UPA812T-T1 UPA812 UPA812T UPA812TGB-T1 PA812T |
Low Noise, High Frequncy Amplifer NPN Transistor(楂??浣??澹版?澶у?NPN?朵?绠? Low Noise, High Frequncy Amplifer NPN Transistor(高频低噪声放大器NPN晶体 HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLD TRANSISTOR | BJT | PAIR | NPN | 10V V(BR)CEO | 65MA I(C) | SOT-363
|
NEC[NEC] NEC Corp.
|
BC550C BC549B BC549B-D BC549C BC550B |
TRANSISTOR|BJT|NPN|45VV(BR)CEO|100MAI(C)|TO-92
Low Noise Transistors NPN Silicon(硅NPN低噪声晶体管) 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 Low Noise Transistor NPN Silicon(30V硅NPN低噪声晶体管) 低噪声晶体管NPN硅(30V的硅npn型低噪声晶体管)
|
ON Semiconductor http://
|
FA1A4Z FA1A4ZL68 FA1A4ZL67 FA1A4ZL69 FA1A4Z-L FA1A |
Compound transistor MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR MINI MOLD TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-346 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR MINIMOLD, SC-59, 3 PIN
|
NEC Corp. ON Semiconductor
|
CIL858O CIL859O CIL2229Y CIL2331 CSC2331 CIL857O C |
TRANSISTOR | BJT | NPN | 250V V(BR)CEO | TO-237VAR TRANSISTOR | BJT | NPN | 300V V(BR)CEO | TO-237 TRANSISTOR | BJT | NPN | 150V V(BR)CEO | TO-237 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | TO-237VAR TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 700MA I(C) | TO-237AA TRANSISTOR | BJT | NPN | 200V V(BR)CEO | TO-237VAR TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 1.5A I(C) | TO-237AA TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 1.5A I(C) | TO-237 TRANSISTOR | BJT | PNP | 160V V(BR)CEO | TO-237 晶体管|晶体管|进步党| 160V五(巴西)总裁|37 TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 1.5A I(C) | TO-237AA
|
Infineon Technologies AG
|
BFG25AW BFG25AW_X BFG25AW/X BFG25X |
NPN 5 GHz wideband transistors C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR NPN 5GHz wideband transistor(NPN 5G赫兹 宽带晶体
|
NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
|
2N538 2N522 2N941 2N586 2N502A 2N795 2N738 2N779 2 |
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset TRANSISTOR | BJT | PNP | 8V V(BR)CEO | TO-5 TRANSISTOR | BJT | PNP | 8V V(BR)CEO | 50MA I(C) | TO-18 TRANSISTOR | BJT | PNP | 30V V(BR)CEO | TO-9 TRANSISTOR | BJT | PNP | 20V V(BR)CEO | TO-9 TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 50MA I(C) | TO-18 TRANSISTOR | BJT | PNP | 15V V(BR)CEO | 100MA I(C) | TO-18 TRANSISTOR | BJT | PNP | 15V V(BR)CEO | 200MA I(C) | TO-18 TRANSISTOR | BJT | PNP | 12V V(BR)CEO | 100MA I(C) | TO-18 TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 100MA I(C) | TO-18 TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 100MA I(C) | TO-18 TRANSISTOR | BJT | PNP | 16V V(BR)CEO | 1A I(C) | TO-5 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 50MA I(C) | TO-18 TRANSISTOR | BJT | NPN | 50V V(BR)CEO | TO-18 晶体管|晶体管|叩| 50V五(巴西)总裁|8 TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 500MA I(C) | TO-5 晶体管|晶体管|进步党| 30V的五(巴西)总裁| 500mA的一(c)|
|
Central Semiconductor, Corp. Microsemi, Corp.
|
KTC1027 KTC1027O KTC1027-15 |
EPITAXIAL PLANAR NPN TRANSISTOR General Purpose Transistor 800 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
KEC(Korea Electronics) Korea Electronics (KEC)
|
FJPF13007H2TTU FJPF13007TU |
NPN Silicon Transistor 8 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB NPN Silicon Transistor; Package: TO-220F; No of Pins: 3; Container: Rail 8 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
|
Fairchild Semiconductor, Corp.
|
2SB1516F5/NP 2SA1727F5/NP 2SD1918F5/NP 2SD1767T101 |
3000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR 500 mA, 400 V, PNP, Si, SMALL SIGNAL TRANSISTOR 1500 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR 0.7 A, 80 V, NPN, Si, POWER TRANSISTOR 3000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR 5 A, 20 V, PNP, Si, POWER TRANSISTOR 1 A, 32 V, NPN, Si, POWER TRANSISTOR 2000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR
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International Rectifier, Corp. Dielectric Laboratories, Inc.
|