| PART |
Description |
Maker |
| MA738 MA2Q738 |
Small-signal device - Diodes - Schottky Barrier Diodes(SBD)
Schottky Barrier Diodes (SBD)
From old datasheet system
|
PANASONIC[Panasonic Semiconductor]
|
| BAS70-04W BAS70-05W BAS70WSERIES BAS70W BAS70-06W |
Schottky barrier double diodes
Schottky Barrier (Double) Diodes(肖特基势垒（双）二极
CSCA-A Series Hall-effect based, open-loop current sensor, Molex-type connector, 300 A rms nominal, ±900 A range
|
http://
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| BAT721 1PS76SB21 1PS76SB21-15-15 BAT721C BAT721S B |
Planar Schottky barrier diodes with an integrated guard ring for stress protection. Encapsulated in small Surface-Mounted Device (SMD) plastic packages.
Schottky barrier diodes in small packages
|
NXP Semiconductors
|
| CDBER0130R-HF CDBER130R-HF |
Halogen Free Schottky Barrier Diodes, V-RRM=35V, V-R=30V, I-O=0.1A
SMD Schottky Barrier Diode
|
Comchip Technology
|
| SB1003EJ |
Small Signal Schottky Barrier Diodes
SCHOTTKY BARRIER DIODE 30V, 1A RECTIFIER
|
SANYO[Sanyo Semicon Device]
|
| BAT15-014 BAT15-044 BAT15-074 BAT15-104 BAT15-124 |
Silicon Schottky Diodes (Low barrier diodes For mixer applications Hermetically sealed ceramic packages For frequencies up to 40 GHz) SILICON, LOW BARRIER SCHOTTKY, X BAND, MIXER DIODE
Silicon Schottky Diodes (Low barrier diodes For mixer applications Hermetically sealed ceramic packages For frequencies up to 40 GHz) 硅肖特基二极管（低搅拌机应用障碍密封二极管频率高0 GHz的陶瓷封装）
RES, 18 OHM 1% 1/8W SILICON, LOW BARRIER SCHOTTKY, C BAND, MIXER DIODE
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| 1PS70SB14 1PS70SB10_14_15_16_1 1PS70SB16 1PS70SB10 |
Schottky Barrier (Double) Diodes(肖特基势垒（双）二极
From old datasheet system
Schottky barrier double diodes
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| HSB226WK |
Schottky Barrier Diodes for Detection and Mixer
SILICON SCHOTTKY BARRIER DIODE
|
HITACHI[Hitachi Semiconductor]
|
| BAT54CW BAT54SW BAT54AW BAT54W BAT54CWT/R BAT54WSE |
Schottky barrier (double) diodes - Cd max.: 10@VR=1V pF; Configuration: dual c.c. ; IF max: 200 mA; IFSM max: 600 A; IR max: 2@VR=25VA; VFmax: 400@IF=10mA mV; VR max: 30 V
Schottky barrier double diodes
|
NXP Semiconductors / Philips Semiconductors
PHILIPS[Philips Semiconductors]
|
| RK16 SPB-G56S AK06 EK06 EK16 FMB-2206 FMB-2306 FMB |
Schottky Barrier Diode - 60V
Schottky Barrier Diodes 肖特基势垒二极管
|
SANKEN[Sanken electric]
Electronic Theatre Controls, Inc.
http://
|
| FM05100-M FM0530-M FM0540-M FM0520-M FM0550-M FM05 |
Chip Schottky Barrier Diodes - Chip Schottky Barrier Diodes 贴片肖特基二极管-肖特基二极管芯片
|
美丽微半导体有限公司
Formosa Microsemi Co., Ltd.
|
| BAT54A BAT54TA BAT54S BAT54SRS-15 |
SILICON EPITAXIAL SCHOTTKY BARRIER DIODES 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE
SOT23 SILICON EPITAXIAL SCHOTTKY BARRIER DIODES
|
Diotec Semiconductor AG
Diodes Incorporated
|
