| PART |
Description |
Maker |
| 2SJ357 D10803EJ3V0DS00 2SJ357-T1 2SJ357-T2 |
P-channel MOS FET(-30V, -3A)
P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH
From old datasheet system
|
NEC[NEC]
|
| 2SJ355 2SJ355-T1 2SJ355-T2 D11217EJ1V0DS00 |
From old datasheet system
P-CHANNEL MOS FET FOR HIGH SWITCHING
P-channel MOS FET (-30V, -2A)
|
NEC[NEC]
|
| STT6602 |
N-Ch: 3.3A, 30V, RDS(ON) 65 m P-Ch: -2.3A, -30V, RDS(ON) 120 m N & P-Channel Enhancement Mode Mos.FET
|
SeCoS Halbleitertechnologie GmbH
|
| CEB05P03 |
-30V P Channel MOS - 30V的P通道马鞍
|
Electro Switch Corp.
|
| MSP2303 |
-30V(D-S) P-Channel Enhancement Mode Power MOS FET
|
MORE Semiconductor Comp...
|
| MSN2306 |
30V(D-S) N-Channel Enhancement Mode Power MOS FET
|
MORE Semiconductor Comp...
|
| RJK03H1DPA RJK03H1DPA-00-J5A RJK03H1DPA13 |
30V, 45A, 2.4m max. Built in SBD N Channel Power MOS FET
|
Renesas Electronics Corporation
|
| FDN372S |
30V N-Channel PowerTrenchSyncFET 2600 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
30V N-Channel PowerTrench SyncFET
|
Fairchild Semiconductor, Corp.
|
| RJK03E9DPA RJK03E9DPA-00-J5A |
30V, 35A, 4.3m max N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| FDMS867408 FDMS8674 |
N-Channel PowerTrench垄莽 MOSFET 30V, 21A, 5.0m楼?
N-Channel PowerTrench庐 MOSFET 30V, 21A, 5.0m惟
N-Channel PowerTrench? MOSFET 30V, 21A, 5.0mΩ
|
Fairchild Semiconductor
|
| RJK03N3DPA |
30V, 35A, 4.7m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
