PART |
Description |
Maker |
2N2369AU 2N2369AUA 2N2369AUB 2N4449 2N4449UA 2N444 |
NPN SILICON SWITCHING TRANSISTOR 200 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-206AB NPN BIPOLAR TRANSISTOR NPN Transistor
|
Microsemi, Corp. MICROSEMI[Microsemi Corporation]
|
2N5038 JAN2N5039 JANTXV2N5039 2N5039 JAN2N5038 JAN |
NPN HIGH POWER SILICON TRANSISTOR 20 A, 90 V, NPN, Si, POWER TRANSISTOR, TO-204AA NPN HIGH POWER SILICON TRANSISTOR 2 A, 90 V, NPN, Si, POWER TRANSISTOR, TO-3 From old datasheet system (JAN2N5038 / JAN2N5039) NPN HIGH POWER SILICON TRANSISTOR NPN Transistor
|
Microsemi, Corp. MICROSEMI[Microsemi Corporation]
|
2SD2017 |
Silicon NPN Triple Diffused Planar Transistor(Darlington)(硅NPN三倍扩散平面达林顿晶体 6 A, 250 V, NPN, Si, POWER TRANSISTOR Silicon NPN Triple Diffused Planar Transistor(Driver for Solenoid, Relay and Motor and General Purpose)
|
Sanken Electric Co., Ltd. SANKEN[Sanken electric]
|
JAN2N2219 JANS2N2219 JAN2N2218 2N2218 JANTX2N2218 |
SMALL SIGNAL BIPOLAR NPN SILICON NPN SWITCHING SILICON TRANSISTOR NPN Transistor
|
MICROSEMI[Microsemi Corporation]
|
BU406-X-T3P-T BU406-X-TA3-T BU406-X-TF3-T BU406-A- |
SILICON NPN SWITCHING TRANSISTOR 7 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-220AB SILICON NPN SWITCHING TRANSISTOR 硅NPN开关晶体管
|
UNISONIC TECHNOLOGIES CO LTD UTC[Unisonic Technologies] 友顺科技股份有限公司 Unisonic Technologies Co., Ltd. ??『绉???′唤??????
|
BC639L34Z BC639D74Z |
NPN Epitaxial Silicon Transistor 1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 NPN Epitaxial Silicon Transistor; Package: TO-92; No of Pins: 3; Container: Ammo 1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
Fairchild Semiconductor, Corp.
|
BFP620E7764 |
RF-Bipolar - NPN Silicon Germanium RF Transistor, high gain low noise RF transistor in SOT343 Package C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
|
Infineon Technologies AG
|
MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS COMPLEMETARY SILICON POWER TRANSISTORS SILICON NPN TRANSISTOR HIGH VOLTAGE PNP POWER TRANSISTOR SILICON NPN POWER DARLINGTON TRANSISTOR RF Power Field Effect Transistors 880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs RF LDMOS Wideband Integrated Power Amplifiers GENERAL PURPOSE L TO X-BAND GaAs MESFET 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
FREESCALE NEC STMICROELECTRONICS[STMicroelectronics]
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