| PART |
Description |
Maker |
| BGA619 |
Latest Silicon Discretes - High IP3 PCS LNA
|
Infineon
|
| BAR50-02L BAR50-02V BAR50-05 BAR50-03W BAR50 |
Silicon PIN Diodes 硅PIN二极
PIN Diodes - PIN-Diode for Bandswitching
Latest Silicon Discretes - PIN Diode for bandswitching applications
|
INFINEON[Infineon Technologies AG]
|
| IRF6643PBF |
Latest MOSFET silicon technology
|
International Rectifier
|
| TN22 TN22-1200 TN22-1500 TN22-1500B TN22-1500B-TR |
STARTLIGHT(Application Specific Discretes A.S.D.?
STARTLIGHT(Application Specific Discretes A.S.D.)
STARTLIGHT(Application Specific Discretes A.S.D.⑩)
STARTLIGHT(Application Specific Discretes A.S.D. STARTLIGHT（专用分立建筑⑩
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| STYN1075 |
Thyristor Discretes (SCRs)
|
Sirectifier Semiconduct...
|
| STYN1055 |
Thyristor Discretes (SCRs)
|
Sirectifier Semiconduct...
|
| IXGT20N100 IXGH20N100 |
IGBT Discretes: Low Saturation Voltage Types Single IGBT
|
IXYS Corporation
|
| IXGK35N120C IXGX35N120C |
IGBT Discretes: Mid-Frequency Range (15KHz-40KHz) Types Single IGBT
|
IXYS
|
| 2-1803001-1 |
SHOULD BE CONTACTED FOR THE LATEST REVISION.
|
TE Connectivity Ltd
|
| 2-1803016-3 |
SHOULD BE CONTACTED FOR THE LATEST REVISION.
|
TE Connectivity Ltd
|
| 2-22280-7 467342-3 467500-1 |
SHOULD BE CONTACTED FOR THE LATEST REVISION.
|
TE Connectivity Ltd
|
