PART |
Description |
Maker |
GTO4000-0.12R |
Gto Snubber Capacitors
|
Vishay Intertechnology
|
FG1600BX24 FG2000DX24 FG2000DX32 |
THYRISTOR|GTO|1.2KV V(DRM)|TO-200VAR75 晶闸管| GTO的| 1.2KV五(DRM)的|00VAR75 THYRISTOR|GTO|1.2KV V(DRM)|TO-200AE 晶闸管| GTO的| 1.2KV五(DRM)的|00AE
|
Dynex Semiconductor, Ltd. Fairchild Semiconductor, Corp.
|
EL2257CS-T7 EL2257 EL2257CN EL2257CS EL2257CS-T13 |
Op Amp, Video, Dual 125MHz, SR=275V/s, Low Power, Low Voltage, Single Supply, Clamping, 100mA Output, with High Speed Disable and Power-Down 125MHz Single Supply, Clamping Op Amp
|
INTERSIL[Intersil Corporation]
|
GDM20830 |
Gate Turn-off (GTO) Thyristor Module
|
Powerex Power Semiconductors
|
HGT1S20N35G3VLS HGT1S20N35G3VL HGTP20N35G3VL FN400 |
72 MACROCELL 5 VOLT ISP CPLD - NOT RECOMMENDED for NEW DESIGN 20A, 350V N-Channel, Logic Level, Voltage Clamping IGBTs From old datasheet system 20A/ 350V N-Channel/ Logic Level/ Voltage Clamping IGBTs
|
http:// INTERSIL[Intersil Corporation]
|
HGT1S20N35G3VL HGTP20N35G3VL HGT1S20N35G3VLS HGT1S |
20A/ 350V N-Channel/ Logic Level/ Voltage Clamping IGBTs 20A, 350V N-Channel, Logic Level, Voltage Clamping IGBTs TRANSISTOR | IGBT | N-CHAN | 380V V(BR)CES | 20A I(C) | TO-263AB XC9536-6PC44C - NOT RECOMMENDED for NEW DESIGN
|
FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation
|
CMPZ4615 CMPZ4616 CMPZ4614 CMPZ4617 CMPZ4618 |
350mW LOW NOISE ZENER DIODE 5% TOLERANCE VARISTOR, 1206 18VDC 0.4JVARISTOR, 1206 18VDC 0.4J; Voltage, varistor at 1mA:25.5V; Voltage, clamping max:42V; Voltage, clamping 8/20us max:40V; Energy, transient 10/1000us max:0.4J; Current, peak 8/20us max:150A; Voltage rating,
|
Central Semiconductor Corp.
|
MBRF1045CT-G MBRF1030CT-G MBRF1060CT-G MBRF10100CT |
Schottky Barrier Rectifiers Diodes, V<sub>RRM</sub>=40V, V<sub>R</sub>=40V, I<sub>O</sub>=10A Schottky Barrier Rectifiers Diodes, V<sub>RRM</sub>=30V, V<sub>R</sub>=30V, I<sub>O</sub>=10A Schottky Barrier Rectifiers Diodes, V<sub>RRM</sub>=100V, V<sub>R</sub>=100V, I<sub>O</sub>=10A
|
Comchip Technology
|
HGTP20N36G3VL HGT1S20N36G3VLS HGT1S20N36G3VL |
20A, 360V N-Channel, Logic Level, Voltage Clamping IGBTs 37.7 A, 355 V, N-CHANNEL IGBT, TO-262AA 20A 360V N-Channel Logic Level Voltage Clamping IGBTs N/A
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
ESDA14V2-1BF3 |
TVS Clamping Array
|
ST Microelectronics
|
320PJT200A |
THYRISTOR|GTO|2KV V(DRM)|TO-200VAR82W 晶闸管| GTO的| 2kV的五(DRM)的|00VAR82W
|
PanJit International, Inc.
|
FG2000DX40 |
THYRISTOR|GTO|2KV V(DRM)|TO-200AE 晶闸管| GTO的| 2kV的五(DRM)的|00AE
|
Fairchild Semiconductor, Corp.
|