| PART |
Description |
Maker |
| IDW40G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| IDH06G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| IDW30G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| IDH04G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| BAT54 BAT54C BAT54S BAT54A BAT54_SERIES_4 BAT54SER |
DIODE KLEINSIGNAL SMD SCHOTTKY 贴片肖特基二极管KLEINSIGNAL
2.5V or 3.3V, 200-MHz, 1:18 Clock Distribution Buffer
Schottky barrier (double) diodes
From old datasheet system
DISCRETE SEMICONDUCTORS
SCHOTTKY BARRIER DOUBLE DIODES
|
Won-Top Electronics Co., Ltd.
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| RB705D |
Diodes > Schottky Barrier Diodes > Surface mounting small signal type
Schottky barrier diode 肖特基势垒二极管
|
ROHM[Rohm]
Rohm Co., Ltd.
|
| MSICSN05120 MSICSN05120E3 |
SiC Schottky Diodes
|
Microsemi
|
| APT30SCD65B |
SiC Schottky Diodes
|
Microsemi
|
| APT10SCD65KCT |
SiC Schottky Diodes
|
Microsemi
|
| SCS215AGHR |
SiC Schottky Barrier Diode
|
Rohm
|
