| PART |
Description |
Maker |
| IDW10G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| IDH05G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| IDH10G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| IDH08G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| MA4ZD03 |
Small-signal device - Diodes - Schottky Barrier Diodes(SBD)
Schottky Barrier Diodes (SBD) Silicon epitaxial planar type
|
Panasonic Semiconductor
|
| RB705D |
Diodes > Schottky Barrier Diodes > Surface mounting small signal type
Schottky barrier diode 肖特基势垒二极管
|
ROHM[Rohm]
Rohm Co., Ltd.
|
| MSICSN05120 MSICSN05120E3 |
SiC Schottky Diodes
|
Microsemi
|
| APT10SCD65KCT |
SiC Schottky Diodes
|
Microsemi
|
| SCS106AG1104 |
SiC Schottky Barrier Diode
|
Rohm
|
| SCS212AJ |
SiC Schottky Barrier Diode
|
Rohm
|
| SCS120AG1104 |
SiC Schottky Barrier Diode
|
Rohm
|
| SCS206AG |
SiC Schottky Barrier Diode
|
Rohm
|
