| PART |
Description |
Maker |
| NAND01G-B |
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
|
STMicroelectronics
|
| NAND08GW3B2AN1E NAND08GW3B2AN1F NAND04GW3B2AN1E NA |
4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories
|
STMICROELECTRONICS[STMicroelectronics]
|
| TC58NVG5D2FTA00 |
32 GBIT (4G X 8 BIT) CMOS NAND E2PROM
|
Toshiba
|
| TC58NVG6D2GTA00 |
64 GBIT (8G X 8 BIT) CMOS NAND E2PROM
|
Toshiba
|
| TC58NVG1S3ETA00 |
2 GBIT (256M x 8 BIT) CMOS NAND E2PROM
|
Toshiba Semiconductor
|
| S34ML16G2 |
16-Gbit, 4-Bit ECC, ×8 I/O, 3 V VCC NAND Flash for Embedded
|
Cypress Semiconductor
|
| TC58DVG02A1FT00 TC58DVG02A TC58DVG02A1FT |
Flash - NAND
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
1-GBIT (128M*8 BITS) CMOS NAND E2PROM
|
TOSHIBA[Toshiba Semiconductor]
|
| TC58NYG1S3EBAI5 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 GBIT (256M × 8 BIT) CMOS NAND E2PROM
|
Toshiba Semiconductor
|
| TC58NVG0S3AFT05 |
1 GBIT (128M × 8 BITS) CMOS NAND EEPROM
|
Toshiba.
Toshiba Semiconductor
|
| EN29LV160AT-70BI EN29LV160AT-90BC EN29LV160AT-90BC |
Replaced by PTN78000W : 16兆位048K × 8 - 1024 kX6位）闪存
Replaced by PTN78000W : 12VOUT 1A WIDE INPUT POSITIVE STEP-DOWN ISR 3-SIP MODULE
16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY
|
Electronic Theatre Controls, Inc.
Eon Silicon Solution Inc.
|
| NAND01GW4A2BE06 NAND01GW3A2B-KGD NAND01GW4A2B-KGD |
Known Good Die, 1 Gbit (x 8/x 16), 528 Byte/264 word page, 3 V, NAND Flash memory
|
Numonyx B.V
http://
|
| V23832-R111-M101 V23832-R311-M101 V23832-R511-M101 |
PAROLI 2 Tx AC, 1.6 Gbit/s
Parallel Optical Links (PAROLI) - PAROLI?2 Tx AC, 1.6 Gbit/s, multistandard electrical interface
Parallel Optical Links (PAROLI) - PAROLI?2 Rx AC, 1.6 Gbit/s,
PAROLI 2 Tx AC/ 2.7 Gbit/s
PAROLI 2 Tx AC/ 1.25 Gbit/s
PAROLI 2 Tx AC/ 1.6 Gbit/s
|
Infineon Technologies AG
|
