| PART |
Description |
Maker |
| 2N6290 2N6473 2N6476 2N6293 2N6110 2N6107 2N6108 2 |
EPITAXIAL-BASE/ SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
SMA FEMALE POWER DIVIDER; NUMBER OF OUTPUT PORTS: 4; FREQUENCY RANGE: 0.5 - 1 GHz; MINIMUM ISOLATION: 20 dB; VSWR: 1.30 MAXIMUM; MAXIMUM INSERTION
EPITAXIAL-BASE SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
|
Boca Semiconductor Corp.
BOCA[Boca Semiconductor Corporation]
|
| 2N5337A-220M |
SILICON NPN EPITAXIAL BASE IN TO220 METAL PACKAGE
NPN Epitaxial Base Transistor（TO220 Metal PackageNPN外延晶体管（TO220 金属封装，高可靠性）)
DIODE SCHOTTKY SINGLE 25V 150mW 0.32V-vf 200mA-IFM 1mA-IF 2uA-IR SOT-523 3K/REEL
|
SEME-LAB[Seme LAB]
TT electronics Semelab Limited
|
| 2N6290 2N6291 2N6292 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
|
Boca Semiconductor Corp...
|
| SW15PCN030 |
Stud Base Silicon Rectifier Diodes
|
Westcode Semiconductors
|
| BDX20 |
PNP SILICON TRANSISTORS EPITAXIAL BASE
|
Comset Semiconductor
|
| SW15PCN040 |
Stud Base Silicon Rectifier Diodes
|
Westcode Semiconductors
|
| G1PM109N1-LF G1PM109N1LF |
Compliant with IEEE 802.3ab standard for 1000 BASE-T
2.5G/5G BASE?T SINGLE PORT
|
Bothhand USA, LP.
|
| EPG4012S |
DATACOM TRANSFORMER FOR 10/100 BASE-TX; 1000 BASE-T APPLICATION(S)
|
|
| 2N3792 |
PNP SILICON EPITAXIAL BASE POWER TANSISTORS
|
SemeLAB
Seme LAB
|
| 2SA814 2SA815 |
SILICON PNP EPITAXIAL BASE MESA TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
| 2N6490 |
15A, 75W, silicon P-N-P epitaxial-base VERSAWATT transistor. -70V.
|
General Electric Solid State
|
