PART |
Description |
Maker |
FQI27N25 FQB27N25 FQB27N25TMAM002 FQB27N25TMNAM002 |
250V N-Channel MOSFET(漏源电压250VN沟道增强型MOS场效应管) 25.5 A, 250 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263 250V N-Channel MOSFET(漏源电压50V的N沟道增强型MOS场效应管) 250V N-Channel QFET
|
Fairchild Semiconductor, Corp. Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
|
ZVP4525E6TA ZVP4525E6-15 |
250V P-CHANNEL ENHANCEMENT MODE MOSFET
|
Diodes Incorporated
|
ZVN4525E6-15 |
250V N-CHANNEL ENHANCEMENT MODE MOSFET
|
Diodes Incorporated
|
IRF614B IRF614BFP001 |
250V N-Channel B-FET / Substitute of IRF614 & IRF614A 250V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
IRFP244B IRFP244BFP001 |
250V N-Channel B-FET / Substitute of IRFP244 & IRFP244A 250V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
IRFW614B IRFI614B IRFI614BTUFP001 IRFW614BTMFP001 |
250V N-Channel B-FET / Substitute of IRFW614A 250V N-Channel MOSFET 250V N-Channel B-FET / Substitute of IRFI614A
|
FAIRCHILD[Fairchild Semiconductor]
|
FQI6N25 FQB6N25 FQB6N25TM |
250V N-Channel QFET 250V N-Channel MOSFET 5.5 A, 250 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor, Corp.
|
IRF634NL IRF634NS IRF634NSTRR |
Power MOSFET(Vdss=250V/ Rds(on)=0.435ohm/ Id=8.0A) Power MOSFET(Vdss=250V, Rds(on)=0.435ohm, Id=8.0A) 功率MOSFET(减振钢板基本\u003d 250V,的Rds(on)\u003d 0.435ohm,身份证\u003d 8.0A TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 8A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 250V五(巴西)直| 8A条(丁)|63AB
|
International Rectifier, Corp.
|
FQI8N25 FQB8N25 FQB8N25TM FQB8N25TMNL |
250V N-Channel QFET 250V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
ZXMN6A25DN8 ZXMN6A25DN8TA ZXMN6A25DN8TC |
N Channel MOSFET DUAL 60V N-CHANNEL ENHANCEMENT MODE MOSFET Line Filter; Current Rating:30A; Voltage Rating:250V; Features:High Attenuation; Peak Reflow Compatible (260 C):No; Terminal Type:Screw; Series:MXB
|
ZETEX[Zetex Semiconductors]
|
IRFP264 IRFP264PBF |
250V Single N-Channel HEXFET Power MOSFET in a TO-247AC package Power MOSFET(Vdss=250V, Rds(on)=0.075ohm, Id=38A) 功率MOSFET(减振钢板基本\u003d 250V,的Rdson)\u003d 0.075ohm,身份证\u003d 38A条)
|
IRF[International Rectifier] International Rectifier, Corp.
|