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APT8020B2LL - POWER MOS 7 800V 38A 0.200 Ohm

APT8020B2LL_2157602.PDF Datasheet


 Full text search : POWER MOS 7 800V 38A 0.200 Ohm
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APT8020JLL Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
POWER MOS 7 800V 33A 0.200 Ohm
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Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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APT8065BVR APT8065 APT8065AVR POWER MOS V 800V 13A 0.650 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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APT8075BVR APT8075 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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APT8015JVFR APT8015 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 800V 44A 0.150 Ohm
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APT8015 APT8015JVR POWER MOS V 800V 44A 0.150 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
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Advanced Power Technology, Ltd.
APT8024JLL Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
POWER MOS 7 800V 29A 0.240 Ohm
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APT8043BFLL APT8043SFLL POWER MOS 7 800V 20A 0.430 Ohm
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS
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APT8052SLL APT8052BLL POWER MOS 7 800V 15A 0.520 Ohm
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APT20M38SVFR APT20M38BVFRG APT20M38BVFR06 APT20M38 Power FREDFET; Package: D3 [S]; ID (A): 67; RDS(on) (Ohms): 0.038; BVDSS (V): 200; 67 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET
Power FREDFET; Package: TO-247 [B]; ID (A): 67; RDS(on) (Ohms): 0.038; BVDSS (V): 200; 67 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Microsemi, Corp.
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