| PART |
Description |
Maker |
| BGA622 |
Silicon MMICs - SiGe Ultra Low Noise Amplifier G = 15dB, NF=1.1dB, 50Ohm, SOT343
|
Infineon
|
| BGA616 |
Silicon MMICs - SiGe 0...5GHz, 15dB Broadband Amplifier, Pout = 18dBm, SOT343
|
Infineon
|
| MAX2642 MAX2642EXT-T MAX2642-MAX2643 MAX2643 MAX26 |
900MHz SiGe, High-Variable IP3, Low-Noise Amplifier
From old datasheet system
900MHz SiGe, High IP3, Low-Noise Amplifiers
900MHz SiGe / High IP3 / Low-Noise Amplifiers
Hex inverters 14-SOIC 0 to 70
|
MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
Maixm
Maxim Integrated Products, Inc.
|
| BGA430 BGB540 |
A 35 dB Gain-Sloped LNB I.F. Amplifier for Direct Broadcast Satellite Television Applications using the BGA430 & BGB540 Silicon MMICs
|
INFINEON[Infineon Technologies AG]
|
| NBSG11 NBSG111 NBSG11BA NBSG53A NBSG53ABA NBSG53AM |
2.5 V/3.3 V SiGe 1:2 Differential Clock Driver with RSECL Outputs
2.5 V/3.3 V SiGe 1:10 Differential Clock Driver with RSECL Outputs
2.5 V/3.3 V SiGe Selectable Differential Clock and Data D Flip-Flop/Clock Divider with Reset and OLS
2.5 V/3.3 V SiGe Differential Smart Gate with Output Level Select
|
ON Semiconductor
|
| NBSG14 |
2.5V/3.3VSiGe Differential 1:4 Clock/Data Driver with RSECL* Outputs(B>RSECL输出.5V/3.3VSiGe，差:4时钟/数据驱动
|
ON Semiconductor
|
| RQG1004UPAQL RQG1004UP-TL-E |
35 mA, 3.5 V, NPN, SiGe, SMALL SIGNAL TRANSISTOR 1.40 X 0.80 MM, 0.55 MM HEIGHT, MFPAK-4
NPN Silicon Germanium Transistor High Frequency Low Noise Amplifier
|
Renesas Electronics, Corp.
RENESAS[Renesas Electronics Corporation]
Renesas Electronics Corporation.
|
| SPM3212 |
GaAs MMICs
|
SANYO
|
| NESG240034 NESG240034-A NESG240034-T1 NESG240034-T |
NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG)
|
NEC
|
| NCP752 NCP752ASN18T1G NCP752ASN33T1G NCP752ASN30T1 |
200 mA, Ultra-Low Quiescent Current, IQ 12 A, Ultra-Low Noise, Low Dropout Regulator
|
ON Semiconductor
|
