| PART |
Description |
Maker |
| M57716M 57716M M57716 |
Silicon Bipolar Power Amplifier for 410-430 MHz 13W Digital Mobile
Silicon Biporlar Power Amplifier for 410-430MHz 13W Digital Mobile
From old datasheet system
Silicon Bipolar Power Amplifier for 410-430MHz 13W Digital Mobile
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| AWT6261R AWT6261RM20P8 |
2.5-2.7 GHz Mobile WiMAX Power Amplifier Module
|
ANADIGICS, Inc
|
| PF0121 |
MOS FET Power Amplifier Module for GSM Mobile Phone
|
Hitachi Semiconductor
|
| UPC8182TB1 |
3 V, 2.9 GHz SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS
|
NEC
|
| UPC8182TB-E3-AZ UPC8182TB UPC8182TB-E3 UPC2762T UP |
3 V, 2.9 GHz SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS 3伏，2.9千兆赫硅MMIC中功率放大器输出功率移动通信
|
NEC, Corp.
California Eastern Laboratories, Inc.
NEC Corp.
NEC[NEC]
|
| OP950 |
PIN Sili con Pho todiode
|
OPTEK[OPTEK Technologies]
ETC
|
| CLY2 Q62702-L96 |
GaAs FET (Power amplifier for mobile phones For frequencies up to 3 GHz) 砷化镓场效应管（功放为频率高千兆赫移动电话）
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| OSM960 OSM960P |
Six Ele ment SMD Pho todiode Ar ray
|
Optek Technology
OPTEK Technologies
|
| OP770D OP770A OP770B OP770C |
NPN Pho totransistor with Collector- Emitter Capacitor
|
OPTEK[OPTEK Technologies]
|
| RFC042 |
Mobile Radio Mini Amplifier
|
RFHIC
|
| RA20H8994M-101 RA20H8994M10 |
896-941MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO
896 MHz - 941 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
|
Mitsubishi Electric Semiconductor
|
