| PART |
Description |
Maker |
| 9N90 |
900 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| 8N90G-TA3-T |
8 Amps, 900 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| 4N90L-TN3-R 4N90G-TN3-R 4N90G-TA3-T 4N90G-TF3-T 4N |
4 Amps, 900 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| APT46GA90JD40 |
High Speed PT IGBT
Insulated Gate Bipolar Transistor - Power MOS 8; Package: ISOTOP®; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 46; 87 A, 900 V, N-CHANNEL IGBT
|
Microsemi Corporation
Microsemi, Corp.
|
| 2SK1943-01 |
OSC 5V 8PIN CMOS 5 A, 900 V, 2.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-channel MOS-FET
|
Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
|
| SDR939/61 SDR936-61 SDR938/61 SDR936/61 |
30 AMP 600-900 VOLTS 80 nsec ULTRA FAST RECTIFIER 30 A, 600 V, SILICON, RECTIFIER DIODE, TO-61
30 AMP 600-900 VOLTS 80 nsec ULTRA FAST RECTIFIER 30 A, 800 V, SILICON, RECTIFIER DIODE, TO-61
30 AMP 600-900 VOLTS 80 nsec ULTRA FAST RECTIFIER 30 A, 900 V, SILICON, RECTIFIER DIODE, TO-61
|
Solid States Devices, Inc.
Solid State Devices, Inc.
|
| IXFH16N90 |
HiPerFET Power MOSFETs 16 A, 900 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
|
IXYS, Corp.
|
| IRFB20STRRPBF IRFB20SPBF |
1.7 A, 900 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET
|
|
| NTP22N06L NTB22N06L NTP22N06L-D |
Power MOSFET 22 Amps, 60 Volts, Logic Level N-Channel TO-220 and D 2 PAK
Power MOSFET 22Amps, 60 Volts,Logic Level N-Channel TO-220(22A, 60 V,逻辑电平，N通道，TO-220封装的功率MOSFET) 22 A, 60 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
ON Semiconductor
|
| 2SK3018 |
SOT-23 Plastic-Encapsulate MOSF ETS
|
TY Semiconductor Co., Ltd
|
| IRFBF20PBF |
1.7 A, 900 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
VISHAY SILICONIX
|
| STW6NC90Z |
5.2 A, 900 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
|
STMICROELECTRONICS
|
|
