PART |
Description |
Maker |
DMF-51026NYU-LY |
160 x 64dots; dot size:0.34 x 0.34mm; 0.3-7.0V 0.9mA LCD module
|
Optrex Corporation
|
FD150R12RT4 |
34mm Module with fast Trench/Feldstopp IGBT4 and Emitter Controlled 4 diode
|
Infineon Technologies AG
|
MG300Q2YS65H |
300 A, 1200 V, N-CHANNEL IGBT IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor Toshiba Corporation
|
BSM75GD120DN2 075D12N2 C67070-A2516-A67 |
IGBT Power Module (Solderable Power module 3-phase full-bridge Including fast free-wheel diodes) 103 A, 1200 V, N-CHANNEL IGBT From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
7MBR15PE120 |
IGBT Module(Power Integrated Module)
|
FUJI[Fuji Electric]
|
2MBI75S 2MBI75S-120 |
IGBT MODULE ( S-Series ) 2-Pack IGBT 1200V 2X75A IGBT模块S系列,包IGBT200X75A 5-Pin, Multiple-Input, Programmable Reset ICs 100 A, 1200 V, N-CHANNEL IGBT
|
http:// FUJI[Fuji Electric] FUJI ELECTRIC HOLDINGS CO., LTD.
|
C67076-A2515-A67 050D06N2 BSM50GD60DN2 |
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes) From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
FZ1200R12KL4C |
IGBT-Wechselrichter / IGBT-inverter IGBT Power Module
|
eupec GmbH
|
MG150J7KS60 |
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications TOSHIBA GTR MODULE SILICON N CHANNEL IGBT
|
Toshiba Semiconductor
|
BSM150GAL100D BSM150GB100D |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1KV V(BR)CES | 150A I(C) 晶体管| IGBT功率模块|独立| 1KV交五(巴西)国际消费电子展| 150A一(c TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1KV V(BR)CES | 150A I(C)
|
Infineon Technologies AG
|
BSM400GA120DL 400A12L C67076-A2302-A70 |
IGBT Power Module (Low Loss IGBT Low inductance single switch Including fast free- wheeling diodes) 680 A, 1200 V, N-CHANNEL IGBT From old datasheet system
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|