| PART |
Description |
Maker |
| ST380C06C0 ST380C06C2 |
1900 A, 600 V, SCR, TO-200AB
600V 960A Phase Control SCR in a TO-200AB (E-Puk) package
|
International Rectifier
|
| ST280C06C0 |
Silicon Controlled Rectifier, 960 A, 600 V, SCR, TO-200AB, EPUK-2
|
Vishay Semiconductors
|
| ST333C..CSERIES 2694 ST333C04CFM0 ST333C08CFM0 ST3 |
800V435A逆变晶闸管采用TO - 200AB（电子北辰）封装
INVERTER GRADE THYRISTORS
From old datasheet system
400V 1435A Inverter Thyristor in a TO-200AB (E-Puk) package
800V 1435A Inverter Thyristor in a TO-200AB (E-Puk) package
Silicon Controlled Rectifier, 1435 A, 800 V, SCR, TO-200AB, METAL CASE WITH CERAMIC INSULATOR, EPUK-3
|
International Rectifier
Vishay Semiconductors
|
| TT430N DT95N TD251N |
800 A, 1800 V, SCR
150 A, 600 V, SCR
410 A, 600 V, SCR
|
Infineon Technologies AG
|
| MCR101G-X-XX-T92-K MCR101G-X-XX-T92-B MCR101-6-B-T |
SENSITIVE GATE SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING THYRISTORS
0.8 A, 400 V, SCR, TO-92
0.8 A, 600 V, SCR, TO-92
0.8 A, 200 V, SCR, TO-92
|
UNISONIC TECHNOLOGIES CO LTD
|
| TT430N18KOC-A TT430N20KOF-K TT430N20KOC-A TT430N22 |
800 A, 1800 V, SCR MODULE-7
800 A, 2000 V, SCR MODULE-7
800 A, 2200 V, SCR MODULE-7
150 A, 800 V, SCR
900 A, 800 V, SCR
900 A, 600 V, SCR
800 A, 800 V, SCR
120 A, 1600 V, SCR
|
Infineon Technologies AG
|
| SD1053C18S20L SD1053C18S30L SD1053C22S20L SD1053C2 |
920 A, 2200 V, SILICON, RECTIFIER DIODE, DO-200AB
1050 A, 2200 V, SILICON, RECTIFIER DIODE, DO-200AB
3000V Fast Recovery Diode in a DO-200AB (B-Puk) package
2800V Fast Recovery Diode in a DO-200AB (B-Puk) package
2500V Fast Recovery Diode in a DO-200AB (B-Puk) package
2200V Fast Recovery Diode in a DO-200AB (B-Puk) package
1800V Fast Recovery Diode in a DO-200AB (B-Puk) package
|
VISHAY SEMICONDUCTORS
International Rectifier
|
| BT169B BT169G BT169 BT169D BT169G112 BT169G126 |
Thyristors logic level - I<sub>GT</sub>: 0.2 mA; I<sub>T</sub> (R<sub>MS</sub>): 0.8 A; V<sub>DRM</sub>: 600 V; Package: SOT54 (TO-92); Container: Ammo pack axial radial taped 0.8 A, 600 V, SCR, TO-92
Thyristors logic level - I<sub>GT</sub>: 0.2 mA; I<sub>T</sub> (R<sub>MS</sub>): 0.8 A; V<sub>DRM</sub>: 600 V; Package: SOT54 (TO-92); Container: Bulk pack 0.8 A, 600 V, SCR, TO-92
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| ND421025 ND421225 ND420625 ND420825 ND421425 ND422 |
POW-R-BLOK Dual SCR/Diode Isolated Module (250 Amperes / Up to 1600 Volts) 393 A, 600 V, SCR
|
POWEREX[Powerex Power Semiconductors]
|
| FS1209BH00TU FS1209DH00TU FS1209MH00TU FS1209NH00T |
12 A, 200 V, SCR, TO-220AB
12 A, 400 V, SCR, TO-220AB
12 A, 600 V, SCR, TO-220AB
12 A, 800 V, SCR, TO-220AB
|
|
| CYNA25-1000 CYNA25-1000PT CYNA25-600 CYNB25-600 CY |
25 A, 1000 V, SCR, TO-220AB
25 A, 400 V, SCR, TO-220AB
25Amp - 400/600/800/1000V - SCR
|
CYNERGY3 CORP
List of Unclassifed Manufacturers
|
| C390TX555 C390EX555 C390MX555 C390NX555 C390PAX555 |
240 x 128 pixel format, STN Blue
Phase Control SCR 590 Amperes Avg 500-1200 Volts 925 A, 600 V, SCR
|
Powerex Power Semicondu...
POWEREX[Powerex Power Semiconductors]
Powerex, Inc.
|
|
