PART |
Description |
Maker |
K7M161825M |
(K7M161825M / K7M163625M) 512Kx36 & 1Mx18 Flow-Through NtRAM-TM
|
Samsung semiconductor
|
K7N161845M K7N163645M |
512Kx36 & 1Mx18-Bit Pipelined NtRAMTM 512Kx36 512Kx36 & 1Mx18-Bit Pipelined NtRAMTM
|
http:// Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
K7Q163652A K7Q161852A |
512Kx36 & 1Mx18 QDRTM b2 SRAM Electrical Outlet Connector; Voltage Rating:125V; Contact Plating:Nickel; Current Rating:30A RoHS Compliant: Yes 512Kx36
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
IS61QDP2B451236A1 IS61QDP2B451236A2 |
512Kx36 and 1Mx18 configuration available
|
Integrated Silicon Solu...
|
K7Q161852A |
512Kx36 & 1Mx18 QDRTM b2 SRAM
|
Samsung semiconductor
|
K7A161830B-QI16 K7A163630B-QC16 K7A161830B-PI25 K7 |
512Kx36 & 1Mx18 Synchronous SRAM
|
Samsung semiconductor
|
K7Q163664B10 K7Q161864B |
512Kx36 & 1Mx18 QDRTM b4 SRAM
|
Samsung semiconductor
|
KM736V989 KM718V089 |
512Kx36 & 1Mx18 Synchronous SRAM
|
Samsung Electronic Samsung semiconductor
|
K7S1618T4C |
512Kx36 & 1Mx18 QDR II b4 SRAM
|
Samsung semiconductor
|
K7N163645M K7N161845M |
512Kx36 & 1Mx18-Bit Pipelined NtRAMTM
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
K7K1636U2C K7K1618U2C |
512Kx36 & 1Mx18 DDRII CIO b2 SRAM
|
Samsung semiconductor
|