| PART |
Description |
Maker |
| BLF6G20LS-75 BLF6G20-75 |
Power LDMOS transistor BLF6G20LS-75<SOT502B (SOT502B)|<<http://www.nxp.com/packages/SOT502B.html<1<Always Pb-free,;BLF6G20LS-75<SOT502B (SOT502B)|<<http://www.nxp.com/packages/SOT502B.html<1<Always Pb-free,;
Power LDMOS transistor BLF6G20-75<SOT502A (SOT502A)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| BLF6G27LS-40P BLF6G27L-40P |
40 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
Power LDMOS transistor
|
NXP Semiconductors N.V.
|
| BLF6G22S-45112 |
Product description45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
Power LDMOS transistor BLF6G22S-45<SOT608B (CDFM2)|<<http://www.nxp.com/packages/SOT608B.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| BLF578XR |
Product descriptionA 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band.
Power LDMOS transistor BLF578XR<SOT539A (SOT539A)|<<http://www.nxp.com/packages/SOT539A.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| L8711P-14 |
RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
| BLA6G1011-200R |
Power LDMOS transistor
|
NXP Semiconductors
|
| LR301-14 |
RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
| BLF10H6600P BLF10H6600PS BLF10H6600P-15 |
Power LDMOS transistor
|
NXP Semiconductors
|
| BLF7G27L-140 |
Power LDMOS transistor
|
Philips Semiconductors
|
