| PART |
Description |
Maker |
| RJK03M3DPA-00-J5A RJK03M3DPA-15 |
30V, 40A, 3.9mΩmax.N Channel Power MOS FET
30V, 40A, 3.9mΩmax. N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| 2SJ325 2SJ325-Z-E2 2SJ325-Z-E2JM 2SJ325-Z-T1 2SJ32 |
P-channel enhancement type
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 4A I(D) | TO-252VAR
|
NEC Corp.
|
| MSN0310W |
30V(D-S) N-Channel Enhancement Mode Power MOS FET
|
MORE Semiconductor Comp...
|
| MSP3401 |
-30V(D-S) P-Channel Enhancement Mode Power MOS FET
|
MORE Semiconductor Comp...
|
| RJK03M5DPA-00-J5A |
30V, 30A, 6.5mmax.N Channel Power MOS FET
|
Renesas Electronics Corporation
|
| RJK03H1DPA RJK03H1DPA-00-J5A RJK03H1DPA13 |
30V, 45A, 2.4m max. Built in SBD N Channel Power MOS FET
|
Renesas Electronics Corporation
|
| TPC8405 |
Field Effect Transistor Silicon N, P Channel MOS Type (P Channel U−MOS IV/N Channel U-MOS III)
|
Toshiba Semiconductor
|
| UPA610TA PA610TA D11199EJ1V0DS00 UPA610 |
Small signal MOSFET 6-pin MM -30V/0.1A, 2.5V drive
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
From old datasheet system
|
NEC
|
| 2SK2103 A5800287 2SK2103T100 |
Transistors > MOS FET > Small Signal MOS FET
From old datasheet system
Small switching (30V, 2A)
Small switching (30V/ 2A)
|
ROHM[Rohm]
|
| HUF76105DK8 FN4380 HUF76105DK8T |
5A/ 30V/ 0.050 Ohm/ Dual N-Channel/ Logic Level UltraFET Power MOSFET
From old datasheet system
5A, 30V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET
5A, 30V, 0.050 Ohm, Dual N-Channel,Logic Level UltraFET Power MOSFET(5A, 30V, 0.050 Ω,双N沟道,逻辑电平,UltraFET功率MOS场效应管)
TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 30V V(BR)DSS | 5A I(D) | SO 5 A, 30 V, 0.072 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
|
Intersil Corporation
Intersil, Corp.
|
| RJK03N0DPA |
30V, 45A, 2.4m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
