PART |
Description |
Maker |
HY57V64820HGLTP-5 HY57V64820HGLTP-55 HY57V64820HGL |
4 Banks x 2M x 8Bit Synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 4 Banks x 2M x 8Bit Synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, PDSO54 CAP 0.01UF 50V 10% X7R SMD-0805 TR-13 PLATED-NI/SN 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 220uF; Voltage: 25V; Case Size: 8x11.5 mm; Packaging: Bulk
|
Hynix Semiconductor, Inc. http:// Hynix Semiconductor Inc. HYNIX[Hynix Semiconductor]
|
HYM64VX005GCL-60 HYM64VX005GCD-60 HYM64V2005GCD-60 |
2M X 64 EDO DRAM MODULE, 60 ns, ZMA144 4M X 64 EDO DRAM MODULE, 60 ns, ZMA144 144 pin SO-DIMM EDO-DRAM Modules 8MB , 16MB, 32MB & 64MB density 2M x 64 Bit EDO DRAM Module (SO-DIMM)... 4M x 64 Bit EDO DRAM Module (SO-DIMM)...
|
INFINEON TECHNOLOGIES AG
|
HY57V64820HG HY57V64820HGLT-5 HY57V64820HGLT-55 HY |
4 Banks x 2M x 8Bit Synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54 CAP 0.01UF 50V 5% X7R SMD-0805 TR-7 PLATED-NI/SN 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 CAP 1500PF 50V 10% X7R SMD-0603 T&R-7IN-PA NI-SN 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 100PF50V_5%_NPO_,SM0603 CSM, CER 100PF 50V 5% 060
|
Hynix Semiconductor, Inc. http:// Hynix Semiconductor Inc. HYNIX[Hynix Semiconductor]
|
K4S280832C K4S280832C-TC_L75 K4S280832C-TC_L1H K4S |
16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 4MB x 8Bit x 4 Banks Synchronous DRAM Data Sheet 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
|
AS4LC4M16DG-6S_IT AS4LC4M16DG-6S_XT AS4LC4M16DG-5S |
4 MEG x 16 DRAM Extended Data Out (EDO) DRAM
|
Austin Semiconductor
|
EM488M1644VTB-75F EM488M1644VTB-6F EM488M1644VTB-7 |
128Mb (2MBank16) Synchronous DRAM 128Mb (2MBank6) Synchronous DRAM 128Mb的(200万Bank6)同步DRAM 128Mb (2M??Bank??6) Synchronous DRAM
|
Electronic Theatre Controls, Inc.
|
AS4C256K16E0 AS4C256K16E0-30JC AS4C256K16E0-35JC A |
5V 256K x 16 CM0S DRAM (EDO), 50ns RAS access time 5V 256K x 16 CM0S DRAM (EDO), 35ns RAS access time 5V 256KX16 CMOS DRAM (EDO) 5V 256K?6 CMOS DRAM (EDO) x16EDOPageModeDRAM
5V256KxCMOSDRAM(EDO)
5V 256K x CMOS DRAM (EDO) 5V 256K x 16 CM0S DRAM (EDO), 30ns RAS access time
|
Alliance Semiconductor Corporation ALSC
|
IBM03164B9C IBM0316809C |
16Mb Synchronous DRAM(16M位同步动态RAM) 16MbMbit x 8 I/O x 2 Bank)Synchronous DRAM(16M位(1Mx 8 I/O x 2 组)同步动态RAM)
|
IBM Microeletronics
|
IS42SM32100C IS42RM32100C-6BLI |
512K x32Bits x2Banks Low Power Synchronous DRAM 1M X 32 SYNCHRONOUS DRAM, 5.5 ns, PBGA90
|
Integrated Silicon Solution, Inc INTEGRATED SILICON SOLUTION INC
|
HY57V561620B HY57V561620BLT-6I HY57V561620BLT-8I H |
SDRAM - 256Mb 4 Banks x 4M x 16Bit Synchronous DRAM 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Hynix Semiconductor Inc. Hynix Semiconductor, Inc.
|