| PART |
Description |
Maker |
| M381L6423DTM-CCC/C4 M381L3223DTM-CCC/C4 M368L6423D |
184pin Unbuffered Module based on 256Mb D-die 64/72-bit Non ECC/ECC 184pin缓冲模块56MbD为基础的非ECC的模4/72-bit / ECC
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| M368L6423F M381L3223FTM M381L3223FTM-CLB3A2 M381L6 |
184pin Unbuffered Module based on 256Mb F-die with 64/72-bit Non-ECC / ECC
|
SANKEN[Sanken electric]
|
| W3EG7235S265JD3 W3EG7235S202JD3 W3EG7235S262JD3 W3 |
256MB - 2x16Mx72 DDR SDRAM REGISTERED ECC, w/PLL
|
WEDC[White Electronic Designs Corporation]
|
| K4S560832E-NCL75 K4S561632E-NCL60 K4S561632E-NCL75 |
16M x 16 SDRAM, LVTTL, 133MHz
256Mb E-die SDRAM Specification 54pin sTSOP-II
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| USBMULTILINKBDM USBMULTILINKUM |
USB HCS08/HCS12 Multilink Rev A Technical Summary(USB MON08 Multilink开发套件，支持68HCS08系列FLASH单片
Intel® RAID Controller SRCZCRX, PCI-X 133MHz Interface, 2 U320 SCSI Channels, 128 MB embedded ECC DDR 333 SDRAM
|
飞思卡尔半导体(中国)有限公司
|
| CD551-115 CD551-104 CD551-101 |
Intel® RAID Controller SRCZCRX, PCI-X 133MHz Interface, 2 U320 SCSI Channels, 128 MB embedded ECC DDR 333 SDRAM
Intel® PRO/Wireless 3945BG Network Connection 逻辑IC
Logic IC
|
Advanced Interconnections, Corp.
|
| K5D5657ACM-F015 |
256Mb NAND and 256Mb Mobile SDRAM 256Mb的NAND闪存56Mb移动SDRAM
|
Samsung Semiconductor Co., Ltd.
|
| M381L6523DUM-LCC M368L2923DUN-CB3 M368L2923DUN-CCC |
DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb D-die with 64/72-bit Non ECC/ECC 66 TSOP-II with Pb-Free (RoHS compliant)
|
SAMSUNG[Samsung semiconductor]
|
| M366S3354BTS-C7A M374S6553BTS-C7A M374S2953BTS-C7A |
SDRAM Unbuffered Module 168pin Unbuffered Module based on 512Mb B-die 62/72-bit Non ECC/ECC
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| W3EG6433S-JD3 W3EG6433S265D3 |
256MB - 2x16Mx64 DDR SDRAM UNBUFFERED 256MB 2x16Mx64 DDR内存缓冲
|
Electronic Theatre Controls, Inc.
|
| KBE00S003M-D411 KBE00S003M |
1Gb NAND*2 256Mb Mobile SDRAM*2
From old datasheet system
1Gb NANDx2 256Mb Mobile SDRAMx2
|
SAMSUNG[Samsung semiconductor]
|
| KMM372F213CS KMM372F213CK KMM372F1600BK |
2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh, 3.3V
16M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V 1,600 × 72的DRAM内存ECC的使6Mx4KK的刷新，3.3
|
Samsung Semiconductor Co., Ltd.
|
