PART |
Description |
Maker |
GMBT194 |
N P N S I L I CO N P L A N A R M E D I UM POWE R T R A N S I S T O R NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
|
E-Tech Electronics LTD GTM CORPORATION
|
RM60CZ-2H RM60DZ-2H RM60CZ-H RM60DZ-H RM60DZ-M RM6 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
RM30TA-H RM30TPM-M RM30TA-M |
MITSUBISHI DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Mitsubishi Electric Corporation
|
E80276 E80271 E80276N |
TRANSISTOR MODULES MEDIUM POWER SWITCHING USE
|
Mitsubishi Electric Semiconductor
|
QM30TX-HB |
TRANSISTOR MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
QM30TB-24 |
TRANSISTOR MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
QM20TD-HB |
TRANSISTOR MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
QM30HA-H |
MITSUBISHI TRANSISTOR MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
QM50DY-24 |
MITSUBISHI TRANSISTOR MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
RM30TPM-H02 RM30TB-M RM30TPM-H |
Rectifier Diodes, 800V Integrated Gate Bipolar Transistor (IGBT) Modules: 250V MEDIUM POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Corporation Mitsubishi Electric Semiconductor
|