| PART |
Description |
Maker |
| TIM4450-12UL |
HIGH POWER P1dB=41.5dBm at 4.4GHz to 5.0GHz
|
Toshiba Semiconductor
|
| TIM7785-12UL09 |
HIGH POWER P1dB=41.5dBm at 7.7GHz to 8.5GHz
|
Toshiba Semiconductor
|
| TIM5964-4UL09 |
HIGH POWER P1dB=36.5dBm at 5.9GHz to 6.4GHz
|
Toshiba Semiconductor
|
| TIM3742-16UL |
HIGH POWER P1dB=42.5dBm at 3.7GHz to 4.2GHz
|
Toshiba Semiconductor
|
| TIM7785-8UL06 |
HIGH POWER P1dB=39.5dBm at 7.7GHz to 8.5GHz
|
Toshiba Semiconductor
|
| TIM3742-12UL09 |
HIGH POWER P1dB=41.5dBm at 3.7GHz to 4.2GHz
|
Toshiba Semiconductor
|
| AWT6109 AWT6109M5P8 AWT6109_REV_2.2 |
From old datasheet system
KPCS CDMA 3.5V/28.5dBm Linear Power Amplifier Module
The AWT6109 is a 3.5V (3.0 V to 4.2 V) high efficiency, 3 stage amplifier module for Korean Band PCS handsets.
|
ANADIGICS, Inc.
Anadigics Inc
|
| AWT6106 AWT6106M5P8 |
PCS/CDMA 3.5V/28.5dBm Linear Power Amplifier Module
From old datasheet system
Power Amplifiers
|
ANADIGICS, Inc
|
| AWT613608 AWT6136RM5P8 AWT6136RM5P9 |
450 MHz CDMA 3.4V/29.5dBm Linear Power Amplifier Module
|
ANADIGICS, Inc
|
| BUX11A |
HIGH CURRENT HIGH POWER HIGH SPEED SILICON N-P-N POWER TRANSISTOR
|
General Electric Solid State
GESS[GE Solid State]
ETC
|
| SML20W65 SML20B56 |
HIGH POWER TERMINATION 56 A, 200 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
TT electronics Semelab, Ltd.
Seme LAB
|
