| PART |
Description |
Maker |
| HM5113805F-6 HM5113805FLTD-6 HM5113805FTD-6 HM5112 |
DRAM Chip, EDO DRAM, 16MByte, 3.3V Supply, Commercial, TSOP II, 32-Pin
128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh
|
Hitachi Semiconductor
|
| HM5112805FLTD-6 HM5113805FLTD-6 |
128M EDO DRAM (16-Mword × 8-bit) 8k refresh/4k refresh
128M EDO DRAM (16-Mword 隆驴 8-bit) 8k refresh/4k refresh
|
Elpida Memory
|
| HM5112805FLTD-6 HM5112805F-6 |
128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh
|
http://
Hitachi,Ltd.
|
| HM5165405F HM5164405F |
64 M EDO DRAM (16-Mword ×4-bit)(64M EDO DRAM (16-M×4-)
|
Hitachi,Ltd.
|
| HM5117805LJ-7 HM5117805LJ-6 |
16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh
|
Elpida Memory, Inc.
|
| HM51W17805TS-5 HM51W17805TS-6 HM51W17805TS-7 HM51W |
16 M EDO DRAM (2-Mword x 8-bit) 2 k Refresh
|
Elpida Memory
|
| HM5212325F HM5212325F-B60 HM5212325FBP-B60 |
128M LVTTL interface SDRAM 100MHz, 1-Mword x 32-bit x 4-bank
128M LVTTL interface SDRAM 100 MHz 1-Mword x 32-bit x 4-bank PC/100 SDRAM
INFRARED LIGHT EMITTING DIODE
LED ORANGE J-TYPE SMD TAPE/REEL 128M的LVTTL接口SDRAM00兆赫1 - Mword × 32位4个银行PC/100 SDRAM
|
HITACHI[Hitachi Semiconductor]
Hitachi,Ltd.
|
| HB56UW873E-5F HB56UW873E-6F HB56UW873E-F |
64MB Buffered EDO DRAM DIMM 8-Mword × 72-bit, 4k Refresh, 1 Bank Module (9 pcs of 8M × 8 components)
64MB Buffered EDO DRAM DIMM 8-Mword 隆驴 72-bit, 4k Refresh, 1 Bank Module (9 pcs of 8M 隆驴 8 components)
|
Elpida Memory
|
| HB56SW3272ESK HB56SW3272ESK-6 HB56SW3272ESK-5 |
256MB Buffered EDO DRAM DIMM 32-Mword x 72-bit/ 4k Refresh/ 2 Bank Module(36 pcs of 16M x 4 components)
256MB Buffered EDO DRAM DIMM 32-Mword x 72-bit, 4k Refresh, 2 Bank Module(36 pcs of 16M x 4 components)
|
Hitachi Semiconductor
Hitachi,Ltd.
|
| HM5164165F HM5165165F HM5165165FJ-5 HM5165165FJ-6 |
64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh
|
HITACHI[Hitachi Semiconductor]
|
| AS4LC256K16E0-35JC AS4LC256K16E0-35TC AS4LC256K16E |
3.3V 256K x 16 CM0S DRAM (EDO), 60ns RAS access time
3.3V 256K x 16 CM0S DRAM (EDO), 45ns RAS access time
3.3V 256K x 16 CM0S DRAM (EDO), 35ns RAS access time
x16 EDO Page Mode DRAM
|
Alliance Semiconductor
|
| HYM5V64834ASLTZG-60 HYM5V64834ASLTZG-50 HYM5V64834 |
8M X 64 EDO DRAM MODULE, 50 ns, DMA144 SODIMM-144
x64 EDO Page Mode DRAM Module X64的EDO公司页面模式内存模块
|
Hynix Semiconductor, Inc.
NXP Semiconductors N.V.
|
