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KBE00S009M-D411 - 1Gb NAND x 2 256Mb Mobile SDRAM x 2

KBE00S009M-D411_2358688.PDF Datasheet
 Full text search : 1Gb NAND x 2 256Mb Mobile SDRAM x 2

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PART Description Maker
KBE00S009M-D411 KBE00S009M From old datasheet system
1Gb NAND x 2 256Mb Mobile SDRAM x 2
 SAMSUNG[Samsung semiconductor]
K5D5657DCM-F015 K5D5657DCM-F0CL MCP Specification of 256Mb NAND and 256Mb Mobile SDRAM
MCP / 256Mb NAND and 256Mb Mobile SDRAM
 SAMSUNG[Samsung semiconductor]
Samsung Electronics
KBE00F005A-D411 KBE00F005A 512Mb NAND*2 256Mb Mobile SDRAM*2
 SAMSUNG[Samsung semiconductor]
K9F5608U0C-VIB0 K9F5608Q0C-HIB0 K9F5608U0C-HIB0 K9 TV 3C 3#20 PIN WALL RECP 512Mb/256Mb 1.8 NAND闪存勘误
512Mb/256Mb 1.8V NAND Flash Errata 512Mb/256Mb 1.8 NAND闪存勘误
32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
 http://
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
HYS72V128321GR-7-D HYS72V128321GR-7.5-D HYS72V1283 1GB PC133 (2-2-2) 2-bank available 2Q02
512MB PC133 (3-3-3) 1-bank
POT 100 OHM 3/8 SQ CERM SL ST
2GB PC133 (3-3-3) 2-bank available 4Q02
256MB PC133 (3-3-3) 1-bank End-of-Life
512MB PC100 (2-2-2) 1-bank End-of-Life
1GB PC133 (3-3-3) 2-bank End-of-Life
2GB PC133 (2-2-2) 2-bank available 4Q02
PC133 Registered SDRAM-Modules PC133的SDRAM的注册模
1GB PC133 (3-3-3) 1-bank available tbd GB的PC133的（3-3-3银行提供待定
16M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168
 Infineon Technologies AG
Infineon Technologies A...
H55S1G62MFP-60 H55S1G62MFP-75 H55S1G62MFP-A3 1Gb (64Mx16bit) Mobile SDRAM
 Hynix Semiconductor
W988D2FBJX6E W988D2FBJX6I W988D2FBJX7E W988D2FBJX7 256Mb Mobile LPSDR
 Winbond
H5MS2562JFR-E3M H5MS2562JFR-J3M H5MS2562JFR-K3M H5 256Mb (16Mx16bit) Mobile DDR SDRAM
 Hynix Semiconductor
K524G2GACB-A050 4Gb NAND Flash 2Gb Mobile DDR
 Samsung semiconductor
HFDOM40MRXXX DOM40MR032 40Pin Flash Disk Module Min.8MB ~ Max.1GB, True IDE Interface Mode, 3.3V / 5.0V Operating 40Pin盘模块Min.8MBMax.1GB，真正的IDE接口模式3.3 / 5.0V工作
 Hanbit Electronics Co.,Ltd.
Hanbit Electronics Co., Ltd.
 
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