| PART |
Description |
Maker |
| DS1250W-150-IND |
NVRAM (Battery Based) NVRAM中（基于电池
|
3M Company
|
| DS1646L-120 |
NVRAM (Battery Based) NVRAM中（基于电池
|
Maxim Integrated Products, Inc.
|
| DS1230AB-150-IND DS1230Y-150-IND DS1230Y-70-IND DS |
NVRAM (Battery Based) NVRAM中（基于电池
|
Epson ToYoCom, Corp.
Maxim Integrated Products, Inc.
|
| DS1235AB-200 DS1235Y-120 DS1235AB-150 DS1235Y-200 |
NVRAM (Battery Based) NVRAM中（基于电池
|
TE Connectivity, Ltd.
|
| M48Z512A-70PM1NBSP M48Z512A-70PM1 |
NVRAM (Battery Based)
From old datasheet system
|
ST Microelectronics
|
| DS1225Y DS1225Y-170 |
NVRAM (Battery Based) NVRAM中（基于电池
64K Nonvolatile SRAM
IC,NOVRAM,8KX8,CMOS,DIP,28PIN,PLASTIC
|
Maxim Integrated Products, Inc.
Dallas
|
| M41ST87WMX6 M41ST87WMX6TR M41ST87YMX6 M41ST87YMX6T |
5.0 V and 3.3/3.0 V secure serial RTC and NVRAM supervisor with tamper detection and 128 bytes of clearable NVRAM
|
STMicroelectronics
|
| M41ST87W11 M41ST87WSS6F |
Serial real-time clock (RTC) supervisor
5.0 V and 3.3/3.0 V secure serial RTC and NVRAM supervisor with tamper detection and 128 bytes of clearable NVRAM
|
ST Microelectronics
STMicroelectronics
|
| GN01096B |
GaAs IC(with built-in ferroelectric)
|
Panasonic Semiconductor
|
| GN01100B |
GaAs IC (with built-in ferroelectric)
|
Panasonic Semiconductor
|
| FM28V020 |
256Kbit Ferroelectric Nonvolatile RAM
|
Ramtron Corporation
|
| GN01081B |
GaAs IC with built-in ferroelectric RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
|
Black Box, Corp.
Panasonic Semiconductor
|
