| PART |
Description |
Maker |
| P2353AB P2353AA P2300EC P0602AARP P1402AARP P1602A |
MCU CMOS 64 LD 33MHZ 8K EPRM, -40C to 85C, 64-TQFP, TRAY
MCU CMOS 68 LD 33MHZ 8K EPRM, 0C to 70C, 68-PLCC, TUBE
MCU CMOS 44 LD 33MHZ 4K EPRM, -40C to 85C, 44-PLCC, TUBE
18LD 20MHZ .5K EPRM/128 EEPROM, -40C to 85C, 18-PDIP, TUBE
SIDAC|77V V(BO) MAX|800MA I(S)|TO-220VAR
MCU CMOS 18 LD 20MHZ 1K FLASH, -40C to 85C, 18-SOIC 300mil, T/R
SIDAC|160V V(BO) MAX|800MA I(S)|TO-220VAR
SIDAC|180V V(BO) MAX|800MA I(S)|TO-220VAR
SIDAC|220V V(BO) MAX|800MA I(S)|TO-220VAR
SIDAC|300V V(BO) MAX|800MA I(S)|TO-220VAR
SIDAC|350V V(BO) MAX|800MA I(S)|TO-220VAR
20LD 4MHZ 1K EPRM/128 EEPROM, -40C to 85C, 20-SSOP 208mil, TUBE
MCU CMOS 28 LD 40MHZ 16K OTP, -40C to 85C, 28-SPDIP, TUBE
MCU CMOS 44 LD 25MHZ 4K EPRM, -40C to 85C, 44-TQFP, TRAY
SIDAC|180V V(BO) MAX|800MA I(S)|TO-92VAR
MCU CMOS 20LD 2K FLASH, 0C to 70C, 20-SSOP 208mil, T/R
SIDAC|220V V(BO) MAX|800MA I(S)|TO-92VAR
MCU CMOS 18LD 2K EPRM/128 EEPROM, -40C to 85C, 18-PDIP, TUBE
SIDAC|160V V(BO) MAX|800MA I(S)|TO-92VAR
18LD 20MHZ 2K EPRM/128 EEPROM, -40C to 85C, 18-SOIC 300mil, T/R
SIDAC|98V V(BO) MAX|800MA I(S)|TO-92VAR
SIDAC|400V V(BO) MAX|800MA I(S)|TO-92VAR
SIDAC|350V V(BO) MAX|800MA I(S)|TO-92VAR
SIDAC|130V V(BO) MAX|800MA I(S)|DO-214AA
SIDAC|40V V(BO) MAX|800MA I(S)|TO-92VAR
SIDAC|210V V(BO) MAX|800MA I(S)|TO-220VAR
20LD 20MHZ 2K FLASH, -40C to 85C, 20-SSOP 208mil, T/R
20LD 4MHZ 2K EPRM/128 EEPROM, -40C to 85C, 20-SSOP 208mil, T/R
MCU CMOS 18 LD LOW PWR, -40C to 85C, 18-SOIC 300mil, T/R
SIDAC的| 260伏特五（公报）最大| 800mA的我（县）|DO - 214AA
SIDAC的| 77V V（下公报）最大| 800mA的我（县）|220VAR
SIDAC的| 40V的五（公报）最大| 800mA的我（县）|220VAR
SIDAC的| 130V五（公报）最大| 800mA的我（县）|220VAR
SIDAC的| 180V五（公报）最大| 800mA的我（县）|220VAR
SIDAC的| 180V五（公报）最大| 800mA的我（县）|20VAR
SIDAC的| 220五（公报）最大| 800mA的我（县）|20VAR
MCU CMOS 40 LD 4MHZ 8K OTP, -40C to 85C, 40-PDIP, TUBE SIDAC的| 40V的五（公报）最大| 800mA的我（县）|2VAR
MCU CMOS 44 LD 10MHZ 8K OTP, 0C to 70C, 44-PLCC, TUBE SIDAC的| 40V的五（公报）最大| 800mA的我（县）|2VAR
SIDAC|98V V(BO) MAX|800MA I(S)|DO-214AA SIDAC的| 98V V（下公报）最大| 800mA的我（县）|DO - 214AA
SIDAC|25V V(BO) MAX|800MA I(S)|DO-214AA SIDAC的| 25V的五（公报）最大| 800mA的我（县）|DO - 214AA
SIDAC|220V V(BO) MAX|800MA I(S)|DO-214AA SIDAC的| 220五（公报）最大| 800mA的我（县）|DO - 214AA
MCU CMOS 40 LD 10MHZ 8K OTP, -40C to 85C, 40-PDIP, TUBE SIDAC的| 40V的五（公报）最大| 800mA的我（县）|2VAR
MCU CMOS 40 LD 10MHZ 8K OTP, -40C to 125C, 40-PDIP, TUBE SIDAC的| 40V的五（公报）最大| 800mA的我（县）|2VAR
14 PIN, 4KB FLASH, 128 RAM, 12 I/O, -40C to 85C, 16-QFN, T/R SIDAC的| 130V五（公报）最大| 800mA的我（县）|20VAR
14 PIN, 1.5KB STD FLASH, 67 RAM, 12 I/O, PB FREE, -40C to 85C, 14-SOIC 150mil, T/R SIDAC的| 98V V（下公报）最大| 800mA的我（县）|2VAR
MCU CMOS 44 LD 33MHZ 4K EPRM, -40C to 85C, 44-TQFP, TRAY SIDAC的| 260伏特五（公报）最大| 800mA的我（县）|2VAR
MCU CMOS 40 LD 40MHZ 8K OTP, -40C to 85C, 40-PDIP, TUBE SIDAC的| 300V五（公报）最大| 800mA的我（县）|2VAR
MCU CMOS 44 LD 20MHZ 4K EPRM, -40C to 125C, 44-MQFP, TRAY SIDAC的| 25V的五（公报）最大| 800mA的我（县）|2VAR
SIDAC|400V V(BO) MAX|800MA I(S)|TO-220VAR SIDAC的| 400V五（公报）最大| 800mA的我（县）|20VAR
MCU CMOS 68 LD 16MHZ 16K EPRM, 0C to 70C, 68-PLCC, TUBE SIDAC的| 260伏特五（公报）最大| 800mA的我（县）|20VAR
MCU CMOS 28 LD 40MHZ 16K OTP, -40C to 85C, 28-SOIC 300mil, T/R SIDAC的| 300V五（公报）最大| 800mA的我（县）|2VAR
SIDAC|250V V(BO) MAX|800MA I(S)|TO-220VAR SIDAC的| 250V五（公报）最大| 800mA的我（县）|20VAR
|
Littelfuse, Inc.
Ohmite Mfg. Co.
Analog Devices, Inc.
Vishay Intertechnology, Inc.
Molex, Inc.
Vicor, Corp.
TE Connectivity, Ltd.
Marktech Optoelectronics
Intel, Corp.
|
| CY7C375I-100AC CY7C375I-125AC CY7C375I-66AC CY7C37 |
UltraLogic 128-Macrocell Flash CPLD
UltraLogic™ 128-Macrocell Flash CPLD
UltraLogic 128-Macrocell Flash CPLD FLASH PLD, 24 ns, PQFP160
UltraLogic 128-Macrocell Flash CPLD FLASH PLD, 24 ns, CQFP160
UltraLogic 128-Macrocell Flash CPLD FLASH PLD, 15 ns, PQFP160
UltraLogic 128-Macrocell Flash CPLD FLASH PLD, 24 ns, CPGA160
|
CYPRESS[Cypress Semiconductor]
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| S29PL129N70FFW002 S29PL127N65GFIW02 |
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
|
SPANSION
|
| 1N4046 1N4049 1N4048 1N4045 1N4056 1N4044 1N4047 1 |
275 Amp Avg Power Silicon Rectifier Diodes 275安培平均电力硅整流二极管
275am Avg POWER SILICON RECTIFIER DIODES
100V 275A Std. Recovery Diode in a DO-205AB (DO-9)package
150V 275A Std. Recovery Diode in a DO-205AB (DO-9)package
200V 275A Std. Recovery Diode in a DO-205AB (DO-9)package
250V 275A Std. Recovery Diode in a DO-205AB (DO-9)package
300V 275A Std. Recovery Diode in a DO-205AB (DO-9)package
400V 275A Std. Recovery Diode in a DO-205AB (DO-9)package
500V 275A Std. Recovery Diode in a DO-205AB (DO-9)package
600V 275A Std. Recovery Diode in a DO-205AB (DO-9)package
700V 275A Std. Recovery Diode in a DO-205AB (DO-9)package
800V 275A Std. Recovery Diode in a DO-205AB (DO-9)package
900V 275A Std. Recovery Diode in a DO-205AB (DO-9)package
1000V 275A Std. Recovery Diode in a DO-205AB (DO-9)package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| 60EPS08 60EPS12 |
800V 60A Std. Recovery Diode in a TO-247AC (2-Pin)package
1200V 60A Std. Recovery Diode in a TO-247AC (2-Pin)package
|
International Rectifier
|
| AM29LV200B AM29LV200BB-120EC AM29LV200BB-120ECB AM |
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 256K X 8 FLASH 3V PROM, 80 ns, PDSO48
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 128K X 16 FLASH 3V PROM, 90 ns, PDSO48
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 2兆位256Kx8Bit/128Kx16位）.0伏的CMOS引导扇区闪存
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 2兆位56Kx8Bit/128Kx16位）.0伏的CMOS引导扇区闪存
|
http://
AMD[Advanced Micro Devices]
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| AM29LV128ML103PCI AM29LV128MH103PCI AM29LV128MH/L |
Am29LV128MH/L - 128 Megabit (8 M x 16-Bit/16 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control
128 Megabit (8 M x 16-Bit/16 M x 8-Bit) MirrorBit3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control 8M X 16 FLASH 3V PROM, 100 ns, PDSO56
128 Megabit (8 M x 16-Bit/16 M x 8-Bit) MirrorBit3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control 8M X 16 FLASH 3V PROM, 110 ns, PDSO56
128 Megabit (8 M x 16-Bit/16 M x 8-Bit) MirrorBit3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control 8M X 16 FLASH 3V PROM, 110 ns, PBGA64
128 Megabit (8 M x 16-Bit/16 M x 8-Bit) MirrorBit?3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control
|
Advanced Micro Devices, Inc.
|
| AM29LV200T-100ECB AM29LV200T-100EE AM29LV200B-120E |
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
Circular Connector; No. of Contacts:3; Series:; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:8; Circular Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:8-33 RoHS Compliant: No
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 256K X 8 FLASH 3V PROM, 100 ns, PDSO48
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 256K X 8 FLASH 3V PROM, 90 ns, PDSO48
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 2兆位56Kx8Bit/128Kx16位）.0伏的CMOS引导扇区闪存
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 256K X 8 FLASH 3V PROM, 150 ns, PDSO48
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 256K X 8 FLASH 3V PROM, 120 ns, PDSO48
Circular Connector; MIL SPEC:MIL-C-26482, Series I; Body Material:Aluminum Alloy; Series:MS3120; No. of Contacts:10; Connector Shell Size:12; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No
Circular Connector; MIL SPEC:MIL-C-26482, Series I; Body Material:Aluminum Alloy; Series:MS3120; No. of Contacts:6; Connector Shell Size:10; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No
|
ADVANCED MICRO DEVICES INC
Advanced Micro Devices, Inc.
|
|
