| PART |
Description |
Maker |
| GSM31P256KB-I66 GSM31P512KB-I66 |
x64 Interleaved Burst Mode SRAM Module
256KB Secondary Cache Module Designed For Use With Intel Pen-tium CPU based system(用于英特尔奔腾处理器系统56KB二级高速缓冲存储器)
512KB Secondary Cache Module Designed For Use With Intel Pen-tium CPU based system(用于英特尔奔腾处理器系统12KB二级高速缓冲存储器)
|
GSI Technology
|
| R2A20112SPW0 R2A20112SPDD-15 |
Critical Conduction Mode Interleaved PFC Control IC
|
Renesas Electronics Corporation
|
| R2A20118ASP R2A20118ASPW0 |
Critical Conduction Mode Interleaved PFC Control IC
|
Renesas Electronics Corporation
|
| HB56HW864ETNK-5 |
x64 EDO Page Mode DRAM Module X64的EDO公司页面模式内存模块
|
ITT, Corp.
|
| HB56HW164DB-8A |
x64 EDO Page Mode DRAM Module X64的EDO公司页面模式内存模块
|
Glenair, Inc.
|
| LT-74H73H-PG |
3.3V, 1.25 Gbps 1490 nm Continuous-Mode TX / 1.25 Gbps 1310 nm Burst-Mode RX 2X5 SFF Package, GE-PON OLT Transceiver
|
Optoway Technology Inc
|
| SPL-74H73H-G |
3.3V / 1.25 Gbps 1490 nm Continuous-Mode TX / 1.25 Gbps 1310 nm Burst-Mode RX IEEE 802.3ah-2004 PX-20 SC SFP OLT Transceiver
|
Optoway Technology Inc
|
| S29NS-J S29NS032J0PBAW003 S29NS064J0PBAW00 S29NS06 |
110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories 110纳米CMOS 1.8伏只有同时读/写，突发模式闪存
110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories 2M X 16 FLASH 1.8V PROM, 65 ns, PBGA44
|
Spansion Inc.
Spansion, Inc.
|
| LT-74E73E-PG |
3.3V, 1.25 Gbps 1490 nm Continuous-Mode TX / 1.25 Gbps 1310 nm Burst-Mode RX 2X5 SFF Package, GE-PON OLT Transceiver (IEEE 802.3ah-2004 1000BASE PX20)
|
Optoway Technology Inc.
|
| PCD5043 PCD5043H |
DECT burst mode controller
|
PHILIPS[Philips Semiconductors]
|
| AM42BDS6408H |
Burst Mode Flash Memory
|
AMD
|
