| PART |
Description |
Maker |
| PDM41024 PDM41024LA10SO PDM41024LA10SOATR PDM41024 |
1 MEGABIT STATIC RAM 128K X 8-BIT
128K X 8 STANDARD SRAM, 15 ns, PDSO32
|
List of Unclassifed Man...
List of Unclassifed Manufacturers
ETC[ETC]
IXYS CORP
|
| K6R1008C1C- K6R1008C1C-C10 K6R1008C1C-C12 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns
128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速CMOS静态RAMV的工作）。在经营商业和工业温度范围
RES-140 0.0625W 1% THICK FILM
128K x 8 high speed static RAM, 5V operating, 15ns
128K x 8 high speed static RAM, 5V operating, 10ns
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| PDM41024 |
1 Megabit Static RAM 128K x 8-Bit
|
Paradigm
|
| IC62C1024L IC62C1024L-35Q IC62C1024L-35QI IC62C102 |
ASYNCHRONOUS STATIC RAM, Low Speed A.SRAM
From old datasheet system
55ns; 5V; 128K x 8 low power CMOS static RAM
35ns; 5V; 128K x 8 low power CMOS static RAM
|
ICSI[Integrated Circuit Solution Inc]
|
| IS61LF12832-8.5TQI IS61LF12832-7.5TQI IS61LF12832- |
128K x 32, 128K x 36 synchronous flow-through static RAM
128K X 32 CACHE SRAM, 8.5 ns, PQFP100
|
INTEGRATED SILICON SOLUTION INC
|
| IDT7MMV4101 IDT7MMV4101S10BG IDT7MMV4101S10BGI IDT |
128K x 24 Three Megabit 3.3V CMOS Static RAM 128K × 24.3V的CMOS静态RAM
Octal Buffers/Drivers With 3-State Outputs 20-SO -40 to 85 128K X 24 STANDARD SRAM, 15 ns, PBGA119
Octal Buffers/Drivers With 3-State Outputs 20-PDIP -40 to 85 128K X 24 STANDARD SRAM, 12 ns, PBGA119
|
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
|
| IDT70V3319S133PRFI IDT70V3399S166PRFI IDT70V3319S1 |
HIGH-SPEED 3.3V 256/128K x 18 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 高速与3.3V 3.3V56/128K × 18 SYNCHRONOU S双，端口静态RAM.5V的接
HIGH-SPEED 3.3V 256/128K x 18 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 128K X 18 DUAL-PORT SRAM, 15 ns, PQFP128
|
Integrated Device Technology, Inc.
|
| K6R1008C1A- K6R1008C1A-C12 K6R1008C1A-C15 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns
128Kx8 High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. 128Kx8高速静态内存（5V工作），旋转引脚输出。在商用和工业温度范围操
128Kx8 High Speed Static RAM5V Operating/ Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.
128K x 8 high speed static RAM, 5V operating, 20ns
128K x 8 high speed static RAM, 5V operating, 15ns
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| CY7C09199V CY7C09199V-12AC CY7C09199V-6AC CY7C0919 |
3.3V 32K/64K/128K x 8/9 Synchronous Dual-Port Static RAM 64K X 9 DUAL-PORT SRAM, 25 ns, PQFP100
3.3V 32K/64K/128K x 8/9 Synchronous Dual-Port Static RAM 32K X 9 DUAL-PORT SRAM, 25 ns, PQFP100
3.3V 32K/64K/128K x 8/9 Synchronous Dual-Port Static RAM 32K X 8 DUAL-PORT SRAM, 18 ns, PQFP100
SM Series Subminiature Basic Switch, Single Pole Double Throw (SPDT), 250 Vac, 11 A, Pin Plunger Actuator, Solder Termination
Memory
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
CYPRESS[Cypress Semiconductor]
|
| IS61C1024 IS61C1024-12H IS61C1024-12HI IS61C1024-1 |
RES POWER .050 OHM 2W 1% SMT 128K X 8 STANDARD SRAM, 15 ns, PDSO32
128K x 8 HIGH-SPEED CMOS STATIC RAM 128K X 8 STANDARD SRAM, 20 ns, PDSO32
128K x 8 HIGH-SPEED CMOS STATIC RAM 128K X 8 STANDARD SRAM, 25 ns, PDSO32
128K x 8 HIGH-SPEED CMOS STATIC RAM 128K X 8 STANDARD SRAM, 15 ns, PDSO32
IC-1MB FAST SRAM 128K X 8 STANDARD SRAM, 15 ns, PDIP32
RES POWER .030 OHM 2W 5% SMT
RES POWER .020 OHM 2W 5% SMT
|
Integrated Silicon Solution, Inc.
ETC[ETC]
Integrated Silicon Solution Inc
|
| IS62LV12816LL IS62LV12816L IS62LV12816L-55B IS62LV |
128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
ASYNCHRONOUS STATIC RAM
|
ICSI[Integrated Circuit Solution Inc]
|
