PART |
Description |
Maker |
APT6020LVR |
POWER MOS V 600V 30A 0.200 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
APT12080JVR |
POWER MOS V 1200V 15A 0.800 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs
|
ADPOW[Advanced Power Technology]
|
M68732LA 68732LA |
400 MHz - 450 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER From old datasheet system Silicon MOS FET Power Amplifier, 400-450MHz 7W FM PORTABLE SILICON MOS FET POWER AMPLIFIER, 400-450MHz, 7W, FM PORTABLE RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 400-450 MHz 7W FM PORTABLE
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
RHRG30120 |
30A/ 1200V Hyperfast Diode 30A, 1200V Hyperfast Diode
|
FAIRCHILD[Fairchild Semiconductor]
|
RJK0852DPB RJK0852DPB-00-J5 RJK0852DPB-13 |
80V, 30A, 12m max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
NGTB30N120IHSW |
IGBT 1200V 30A FS1 Induction Heating
|
ON Semiconductor
|
APT12045L2VR |
POWER MOS V 1200V 26A 0.450 Ohm
|
Advanced Power Technology
|
RJK60S7DPK-M0 RJK60S7DPK-M0-T0 |
600V -30A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK6018DPM-00T1 |
600V - 30A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
FGW30N120H |
Discrete IGBT (High-Speed V series) 1200V / 30A
|
Fuji Electric
|